Addisonengineering -silicon wafer processing

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Silicon Wafer Processing
Addison Engineering has an extensive array of
processing capabilities. On our silicon or yours, we can
provide virtually any processing service you may need,
from a simple oxide layer to completely patterned wafers.
 Thermal oxide
 Ion implant
 Epitaxial deposition
 Plasma nitride
 Photoresist
 Wafer bumping

About Wafers:
In electronics, a wafer (also called a slice or substrate) is a thin
slice of semiconductor material, such as a silicon crystal, used in the
fabrication of integrated circuits and other microdevices.
The wafer serves as the substrate for microelectronic devices
built in and over the wafer and undergoes many microfabrication process
steps such as doping or ion implantation, etching, deposition of various
materials, and photolithographic patterning.

Formation:
 Wafers are formed of highly pure (99.9999999% purity) nearly
defect free single crystal material.
 One process for forming crystalline wafers is known as Czochralski
growth invented by the Polish chemist Jan Czochralski.
 In this process, a cylindrical ingot of high purity monocrystalline
semiconductor, such as silicon or germanium, is formed by pulling a
seed crystal from a 'melt'.

Donor impurity atoms, such as boron or phosphorus in the case of
silicon, can be added to the molten intrinsic material in precise
amounts in order to dope the crystal, thus changing it into n-type or
p-type extrinsic semiconductor.

Thermal oxide:
 Oxide
TEOS/PETEOS oxide
 Gate oxide
 Low temperature oxide
 PSG glass
 Silicon Nitride
 LPCVD
 Low Stress
 Ultra-low Stress
 Polysilicon (undoped)

 Metal deposition
 Evaporation
 Sputter
 Epitaxial deposition
 Ion implantation
 SOI
 oxidation
 wafer bonding
 Photolithography

 Clean
 RCA clean
 Mechanical
 Ingot slicing
 Lap & etch
 Wafer thinning
 Wafer downsize (diameter cut-down)
 Wafer dicing

 Wafer reclaim
 Laser marking
 Wafer bumping
 MEMS - Silicon machining

Thin Film Processing:
LOW k
Black Diamond®
Coral®
Spin On
and more
OXIDE: CVD and Thermal
Thick Photoresist & Polymide
High Energy Deep Ion Implant
Nitrides (Si- and O-)

Low Stress Silicon Nitride
BPSG, PSG, USG
Amorphous Silicon
Diamond Like Carbon
Polysilicon (Doped and Undoped)
METALS: PVD, CVD, Electroplate
Ai, Cu, Au, Cr, Ta, Ti, TiN
TiW, TaN, WN, Ni, Ru
Co, NiSi, TiO2, Pt

Czochralski Growth:

Grinding and Slicing:

Lapping and Etching:

Polishing and Cleaning:

Sizes Available:
Silicon wafers are available in several sizes
(diameters)
 1” (25mm)
 2” (50mm)
 3” (75 mm)
 4” (100mm)
 5” (125mm)
 6” (150mm)
 8” (200mm)
 12” (300mm)
 18” (450mm)

Addison Engineering provides Silicon wafers that are
available with a wide range of characteristics (specifications)
to select from.
Thank You

Addisonengineering -silicon wafer processing

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