1.
COLLEGE OF ENGINEERING
ROORKEE
Control Systems and Instrumentation
At
Samsung Electronic-Ghaziabad
SUBMITTED FOR PARTIAL FULFILLMENT OF B.TECH IN:
ELECTRONICS AND TELECOMMUNICATION
ENGINEERING
INDUSTRIAL INTERACTION LAB (PEC-752)
SUBMITTED TO: SUBMITTED BY:
Ms. ASHITA VERMANI SAGAR KHARAB
ASSISTANT PROFESSOR ET-K (IVth
YEAR)
DEPARTMENT OF ELECTRONICS AND TELECOM. CLASS ROLL NO. - 16
COLLEGE OF ENGINEERING ROORKEE UNIV. R.NO. -110060102087

2.
CONTENTS
Certificate
Chapter 1: About Samsung Electronics
 Introduction
 Operations
 Products
 Mission of Company
Chapter 2: Instrumentations and Control System Products
 Architecture Products
 Application Processors
Chapter 3: Introduction to Exynos
 History
 Semiconductor Technology
 14 nm Technology
 Instruction Set
 Microarchitecture
 Relation to instruction set architecture
Chapter IV: Exynos Family
Chapter V: Exynos 5
 Introduction
 Exynos 5 Octa (Exynos 5422)
 Internal Architecture
 HKMG Transistor
 big.LITTLE Processing
Chapter IX: Applications
 Navigation Devices
 Smart Phone
 Graphical performance without compromising power consumption
 Low Power Multitasking
 WQXGA Display in Mobile device
 Incredible experience for 3D gaming
References

3.
Chapter I
About Samsung Electronics
Introduction:
Samsung Electronics Co., Ltd. is a South Korean multinational electronics company
headquartered in Suwon, South Korea. It is the flagship subsidiary of the Samsung Group,
amounting to 70% of the group's revenue in 2012, and has been the world's largest
information technology company by revenues since 2009. Samsung Electronics has assembly
plants and sales networks in 80 countries and employs around 370,000 people. Since 2012,
the CEO is Kwon Oh-Hyun. Samsung has long been a major manufacturer of electronic
components such as lithium-ion batteries, semiconductors, chips, flash memory and hard
drive devices for clients such as Apple, Sony, HTC and Nokia.
In recent years, the company has diversified into consumer electronics. It is the world's
largest manufacturer of mobile phones and smartphones fuelled by the popularity of
its Samsung Galaxy line of devices.[11]
The company is also a major vendor of tablet
computers, particularly its Android-powered Samsung Galaxy Tab collection, and is
generally regarded as pioneering the phablet market through the Samsung Galaxy
Note family of devices.
Samsung has been the world's largest manufacturer of LCD panels since 2002, the world's
largest television manufacturer since 2006, and world's largest manufacturer of mobile
phones since 2011. Samsung Electronics displaced Apple Inc. as the world's largest
technology company in 2011 and is a major part of the South Korean economy. In June 2014
Samsung published the Tizen OS with the new Samsung Z.

4.
Operations:
The company focuses on four areas: digital media, semiconductor, telecommunication network,
and LCD digital appliances.
The digital-media business area covers computer devices such as laptop computers and laser
printers; digital displays such as televisions and computer monitors; and consumer
entertainment devices such as DVD players, MP3 players and digital camcorders; and home
appliances such as refrigerators, air conditioners, air purifiers, washers, microwave ovens,
and vacuum cleaners.
The semiconductor-business area includes semiconductor chips such as SDRAM,SRAM,
NAND flash memory ; smart cards ; mobile application processors ; mobile TV receivers;
RF transceivers; CMOS Image sensors, Smart Card IC, MP3 IC, DVD/Blu-ray Disc/HD
DVD Player SOC and multi-chip package (MCP); and storage devices such as optical disc
drives and formerly hard disk drives.
The telecommunication-network-business area includes multi–service DSLAMs and fax
machines; cellular devices such as mobile phones, PDA phones, and hybrid devices called
mobile intelligent terminals (MITs); and satellite receivers.
The LCD business area focuses on producing TFT-LCD and organic light-emitting diode (OLED)
panels for laptops, desktop monitors, and televisions.
Samsung Print was established in 2009 as a separate entity to focus on B2B sales and has
released a broad range of multifunctional devices and printers and more.
Products:
LCD and LED panels.
While reducing the thickness substantially, the company maintained the performance of
previous models, including full HD resolution, 120 Hz refresh rate, and 5000:1 contrast ratio.
On September 6, 2013, Samsung launched its 55-inch curved OLED TV (model KE55S9C)
in the United Kingdom with John Lewis.
In early October 2013, the Samsung Corporation disseminated a press release for its curved
display technology with the Galaxy Round smartphone model. The press release described
the product as the "world’s first commercialized full HD Super AMOLED flexible display."
The manufacturer explains that users can check information such as time and battery life
when the home screen is off, and can receive information from the screen by tilting the
device.

5.
Mobile Phones
At the end of the third quarter of 2010, the company had surpassed the 70 million unit mark
in shipped phones, giving it a global market share of 22 percent, trailing Nokia by 12
percent. Overall, the company sold 280 million mobile phones in 2010, corresponding to a
market share of 20.2 percent. Partially owing to strong sales of the Samsung Galaxy range of
smartphones, the company overtook Apple in worldwide smartphone sales during the third
quarter 2011, with a total market share of 23.8 percent, compared to Apple's 14.6-percent
share.[73]
Samsung became the world's largest cell phone maker in 2012, with the sales of 95
million smart phones in the first quarter.
During the third quarter of 2013, Samsung's smartphone sales were boosted by a strong
consumer reception in emerging markets such as India and the Middle East, where lower-
priced handsets were popular. As of October 2013, the company offers 40 smartphone
models on its US website.
The smartphone market share of Samsung decreased to 24 percent in Q3 2014 from 29
percent in Q2 2014 and 32.9 percent in Q3 2013
Semiconductors
A Samsung DDR-SDRAM
Samsung Electronics has been the world's-largest memory chip maker since 1993. In 2009 it
started mass-producing 30 nm-class NAND flash memories. It succeeded in 2010 in mass-
producing 30 nm-class DRAMs and 20 nm-class NAND flashes, both of which were the first
time in the world.
Other
Samsung produces printers for both consumers and business use, including mono-laser
printers, color laser printers, multifunction printers, and enterprise-use high-speed digital
multifunction printer models.
In 2010, the company introduced a number of energy efficient products, including the laptop
R580, netbook N210, the world's-smallest mono-laser printer ML-1660, and color laser
multifunction printer CLX-3185.

6.
The Samsung GX-10 digital SLR camera
Samsung has introduced several models of digital cameras and camcorders including the
WB550 camera, the ST550 dual-LCD-mounted camera, and the HMX-H106 (64GB SSD-
mounted full HD camcorder). In 2009, the company took the third place in the compact
camera segment. Since then, the company has focused more on higher-priced items. In 2010,
the company launched the NX10, the next-generation interchangeable lens camera.
Mission of Company:
Everything we do at Samsung is guided by our mission: to be the best “digital E-Company”.
It is our Quality Policy that we deliver on the basis of an effective quality system the best
products and services that exceed our customers’ requirements and expectations.
All executives and employees of SAMSUNG are making continuous efforts to achieve the
very best quality in all our products and services.
We obtained ISO/TS16949, the international standard for automotive industry, in 2004. We
also achieved TL9000, the international standard for Telecommunication industry, in Oct.
2001. In addition, we are continuously upgrading the quality management system in all stages
ranging from order receipt, development, production to shipment.
Samsung is guided by a singular vision: to lead the digital convergence movement.
Samsung believe that through technology innovation today, we will find the solutions we
need to address the challenges of tomorrow.
From technology comes opportunity—for businesses to grow, for citizens in emerging
markets to prosper by tapping into the digital economy, and for people to invent new
possibilities.
It’s our aim to develop innovative technologies and efficient processes that create new
markets, enrich people’s lives and continue to make Samsung a trusted market leader.

7.
Chapter 2
Instrumentations and Control System Products
• Architecture Products
• CMOS Image Sensors: An image sensor is a device that converts an optical
image into an electronic signal. It is used mostly in digital cameras, camera
modules and other imaging devices. Early analog sensors were video camera
tubes; currently used types are semiconductor charge-coupled devices (CCD)
or active pixel sensors in complementary metal–oxide–semiconductor
(CMOS) or N-type metal-oxide-semiconductor (NMOS, Live MOS)
technologies.
• Mobile Memory Solutions: mobile memory enables outstanding design
flexibility. Our Mobile DRAM solutions help designers create sleek devices
with heightened functionality. And, our innovative "chip-stack" MCP
solutions optimize board space by combining different memory technologies
on a single substrate.
• DRAM: High-speed, power-saving memory for the next generation of mobile
devices. Find out why leading manufacturers utilize SAMSUNG Mobile
DRAM for eBooks, tablet computers, smart phones, MP3s, and PDAs. Deliver
the features you need to confidently meet market demand for handheld devices
with high-performance memory built specifically for the leading edge of
mobile device and application design.
• Application Processors:
Deliver outstanding user experiences for today's ultra-small mobile devices,
tablets, notebooks, and smartphones with high-performance, low-power Samsung
application processors (APs). Minimize the overall size of your mobile device by
using the latest system-on-a-chip (SoC) technology. We can integrate a variety of
systems including CPUs, graphic accelerators, image signal processors, and storage
interfaces. Samsung's flagship SoC product line, Exynos, comprises an exceptional set
of APs based on highly advanced mobile technologies, including Samsung's High-K
Metal Gate (HKMG) low-power process. The broad range of the Exynos line offers
mobile device architects the solutions they need to meet exacting design requirements.

8.
Chapter 3
Introduction to Exynos
Exynos is a series of ARM-based System-on-Chips (SoCs) developed and manufactured
by Samsung Electronics and is a continuation of SAMSUNG's earlier S3C, S5L and S5P line
of SoCs.
History:
In 2010 Samsung launched the S5PC110 (now Exynos 3 single) in its Samsung Galaxy
S mobile phone, which featured a licensed ARM Cortex-A8 CPU.
In early 2011, Samsung first launched the Exynos 4210 SoC in its Samsung Galaxy S
II mobile smartphone. The driver code for the Exynos 4210 was made available in the Linux
kernel and support was added in version 3.2 in November 2011.
On 29 September 2011, Samsung introduced Exynos 4212[5]
as a successor to the 4210; it
features a higher clock frequency and "50 percent higher 3D graphics performance over the
previous processor generation". Built with a 32 nm High-K Metal Gate (HKMG) low-power
process; it promises a "30 percent lower power-level over the previous process generation."
On 30 November 2011, Samsung released information about their upcoming SoC with
a dual-core ARM Cortex-A15 CPU, which was initially named "Exynos 5250" and was later
renamed to Exynos 5 Dual. This SoC has a memory interface providing 12.8 GB/sec of
memory bandwidth, support for USB 3.0 and SATA 3, can decode full 1080p video at
60fps along with simultaneously displaying WQXGA-resolution (2560x1600) on a mobile
display as well as 1080p over HDMI.
On 26 April 2012, Samsung released the Exynos 4 Quad, which powers the Samsung Galaxy
S III and Samsung Galaxy Note II. The Exynos 4 Quad SoC uses 20% less power than the
SoC in Samsung Galaxy SII. Samsung also changed the name of several SoCs, Exynos 3110
to Exynos 3 Single, Exynos 4210 and 4212 to Exynos 4 Dual 45 nm, and Exynos 4 Dual
32 nm and Exynos 5250 to Exynos 5 Dual.
Semiconductor Technology:
Semiconductor device fabrication is the process used to create the integrated
circuits that are present in everyday electrical and electronic devices. It is a multiple-step
sequence of photo lithographic and chemical processing steps during
which ELECTRONIC circuits are gradually created on a wafer made of
pure semiconducting material. Silicon is almost always used, but various compound
semiconductors are used for specialized applications. The entire manufacturing process, from
start to packaged chips ready for shipment, takes six to eight weeks and is performed in
highly specialized facilities referred to as fabs.

9.
Various Semiconductor Technologies: Semiconductor is generally discriminated on the
basis of the width of the semiconductor wafer. Lesser the width, better the technology.
Name of Technology Year of Introduction
10 µm 1971
6 µm 1974
3 µm 1977
1.5 µm 1982
1 µm 1985
800 nm 1989
600 nm 1994
350 nm 1995
250 nm 1997
180 nm 1999
130 nm 2001
90 nm 2004
65 nm 2006
45 nm 2008
32 nm 2010
22 nm 2012
14 nm 2014
10 nm 2016
7 nm 2018
5 nm 2020

10.
14 nm Technology:
The 14 nanometer (14 nm) semiconductor device fabrication node is the technology
node following the 22 nm/ (20 nm) node. The naming of this technology node as "14 nm"
came from the International Technology Roadmap for Semiconductors (ITRS). The 14 nm
technology was reached by semiconductor companies in 2014.
14 nm resolution is difficult to achieve in a polymeric resist, even with electron beam
lithography. In addition, the chemical effects of ionizing radiation also limit reliable
resolution to about 30 nm, which is also achievable using current state-of-the-art immersion
lithography. Hardmask materials and multiple patterning are required.
A more significant limitation comes from plasma damage to low-k materials. The extent of
damage is typically 20 nm thick, but can also go up to about 100 nm. The damage sensitivity
is expected to get worse as the low-k materials become more porous.
For comparison, the lattice constant, or distance between surface atoms, of unstrained silicon
is 543 pm (0.543 nm). Thus fewer than thirty atoms would span the channel length, leading to
substantial leakage.
Tela Innovations and Sequoia Design Systems have developed a methodology allowing
double exposure for the 14 nm node.
SAMSUNG and Synopsys have also begun implementing double patterning in 22 nm and
16 nm design flows.
Mentor Graphics reported taping out 16 nm test chips in 2010.
On January 17, 2011, IBM announced that they are teaming up with ARM to develop 14 nm
chip processing technology.
On February 18, 2011, Intel announced that it would construct a new $5
billion semiconductor fabrication plant in Arizona, designed to manufacture chips using the
14 nm manufacturing processes and leading-edge 300 mm wafers. The new fabrication plant
was to be named Fab 42, and construction was meant to start in the middle of 2011. Intel
billed the new facility as "the most advanced, high-volume manufacturing facility in the
world," and said it would come on line in 2013. Intel has since decided to postpone opening
this facility and instead upgrade its existing facilities to support 14-nm chips.
On May 17, 2011, Intel announced a roadmap for 2014 that includes 14 nm transistors for
their Xeon, Core, and Atom product lines.
Instruction Set:
An instruction set, or instruction set architecture (ISA), is the part of the computer
architecture related to programming, including the native data types, instructions, registers,
addressing modes, memory architecture, interrupt and exception handling, and external I/O.
An ISA includes a specification of the set of opcodes (machine language), and the native
commands implemented by a particular processor.

11.
Generally we use ARM Architecture. ARM architecture forms the basis for every ARM
processor. Over time, the ARM architecture has evolved to include architectural features to
meet the growing demand for new functionality, high performance and the needs of new and
emerging MARKETS. There are currently two ARMv8 profiles, the ARMv8-A
architecture profile for high performance MARKETS such as mobile and enterprise, and
the ARMv8-R architecture profile for embedded applications in automotive and industrial
control.
The ARM architecture supports implementations across a wide range of performance points,
establishing it as the leading architecture in many MARKET segments. The ARM
architecture supports a very broad range of performance points leading to very small
implementations of ARM processors, and very efficient implementations of advanced designs
using state of the art micro-architecture techniques. Implementation size, performance, and
low power consumption are key attributes of the ARM architecture.
ARM developed architecture extensions to provide support for Java acceleration (Jazelle®),
security (TrustZone®), SIMD, and Advanced SIMD (NEON™) technologies. The ARMv8-
architecture adds a Cryptographic extension as an optional feature.
The ARM architecture is similar to a Reduced Instruction Set Computer (RISC) architecture,
as it incorporates these typical RISC architecture features:
A uniform register file load/store architecture, where data processing operates only on
register contents, not directly on memory contents.
Simple addressing modes, with all load/store addresses determined from register contents and
instruction fields only.
Evolution of various architecture

12.
Architecture used in the various Exynos processors are as following:
Architecture
Bit
width
Cores designed by ARM
Holdings
Cores designed by third
parties
Cortex
profile
ARMv7-A 32
ARM Cortex-A5, ARM
Cortex-A7,ARM Cortex-
A8, ARM Cortex-A9,ARM
Cortex-A12, ARM
Cortex-A15,ARM Cortex-
A17
Krait, Scorpion, PJ4/Sheeva,
Apple A6/A6X
Application
ARMv8-A 64/32
ARM Cortex-A53, ARM
Cortex-A57[29]
X-Gene, Nvidia Project
Denver, AMD K12,
Apple A7/A8, Cavium Thunder
X[30][31][32]
Application
Microarchitecture:
In electronics engineering and computer engineering, microarchitecture (even sometimes
abbreviated to µarch or uarch), also called computer organization, is the way a
given instruction set architecture (ISA) is implemented on a processor. A given ISA may be
implemented with different microarchitectures; implementations may vary due to different
goals of a given design or due to shifts in technology.
Computer architecture is the combination of microarchitecture and instruction set design.
Relation to instruction set architecture:
The ISA is roughly the same as the programming model of a processor as seen by
an assembly language programmer or compiler writer. The ISA includes the execution
model,processor registers, address and data formats among other things. The
microarchitecture includes the constituent parts of the processor and how these interconnect
and interoperate to implement the ISA.

13.
Single bus organization microarchitecture
The microarchitecture of a machine is usually represented as (more or less detailed) diagrams
that describe the interconnections of the various microarchitectural elements of the machine,
which may be everything from single gates and registers, to complete arithmetic logic
units (ALUs) and even larger elements. These diagrams generally separate
the datapath (where data is placed) and the control path (which can be said to steer the data).

14.
Chapter 4
Exynos Family
Samsung has done enormous work in the field of mobile application processors. List of all
Exynos Processors is as follows:
Exynos 3 Single
(previously S5PC110, Hummingbird, Exynos 3110)
Exynos 3 Quad(Exynos 3470)
Exynos 4 Dual 45 nm(Exynos 4210)
Exynos 4 Dual 32 nm(Exynos 4212)
Exynos 4 Quad (Exynos 4412 Prime)
Exynos 5 Dual (Exynos 5250)
Exynos 5 Octa (Exynos 5410)
Exynos 5 Octa(Exynos 5420)
Exynos 5 Octa (Exynos 5422)
Exynos 5 Octa (Exynos 5800)
Exynos 5 Hexa (Exynos 5260)
Exynos 5 Octa (Exynos 5430)
Exynos 7 Octa (Exynos 5433/7410)

15.
Chapter 5
Exynos 5
Introduction:
Exynos 5 is the World’s first ARM Cortex-A15 processor. This processor was
introduced in the market by Samsung Electronics Co. Ltd. in late 2011.
Exynos 5 is available in various different variants which are as following:
Exynos 5 Octa (Exynos 5422):
This is one of the powerful and best processor of all of the Exynos 5 versions. Some
of the key features of this are as follows:
 ARM Cortex-A15 Quad CPU (Eagle) with NEON as high performance processor
 32 KB (Instruction)/32 KB (Data) Cache and 2 MB L2 Cache
 ARM Cortex-A7 Quad CPU (Kingfisher) as power-efficient performance processor
 32 KB (Instruction)/32 KB (Data) Cache and 512 KB L2 Cache
 128-bit Multi-layer Network-on-Chip (NoC) architecture
 Cache Coherent Interface (CCI) among Cortex-A15 and Cortex-A7, G2D, G3D and SSS
 Memory Subsystem:
- 2-ports 32-bit up to 933 MHz LPDDR3/DDR3 Interfaces
- 2-ports 32-bit up to 533 MHz LPDDR2 Interfaces
 Multi-format Video Hardware codec (MFC): 1920x1080@120fps (capable of decoding and encoding MPEG-
4/H.263/H.264/VP8 and decoding of MPEG-2/VC1 video) and upto 8192x8192 H.264 and VP8
encoding/decoding
 3D and 2D graphics hardware, supporting a variety of APIs
 OpenGL ES 1.1/2.0/3.0, OpenCL 1.1,OpenVG 1.0.1, DirectX 11, and Google Renderscript
 Image Signal Processor: Supporting BayerRGB up to 14-bit input with 16MP 30 fps through MIPI CSI2
interfaces and special functionalities such as with Dynamic Range Compression (DRC), Face Detection (FD),
3D Noise Reduction filter (3DNR) and 3AA
 JPEG Hardware Codec
 LCD single display, supporting max WQXGA, 24 bpp RGB, YUV formats through MIPI DSI or eDP
Exynos 5 Dual (Exynos 5250)
Exynos 5 Octa (Exynos 5410)
Exynos 5 Octa (Exynos 5420)
Exynos 5 Octa (Exynos 5422)
Exynos 5 Octa (Exynos 5800)
Exynos 5 Hexa (Exynos 5260)
Exynos 5 Octa (Exynos 5430)

16.
 HDMI 1.4a interfaces with on-chip PHY
 2-ports (4/4 lanes) MIPI CSI2 interfaces for both rear and front camera
 1-port (4 lanes) eDisplayPort (eDP)
 2-channel USB 3.0 Host or Device (with USB2.0 backward compatibility), supporting SS (5 Gbps) with on-chip
PHY
 1-channel USB 2.0 Host, supporting LS/FS/HS (1.5 Mbps/12 Mbps/480 Mbps) with on-chip PHY
 1-channel USB HSIC, supporting 480 Mbps with on-chip PHY
 1-channel 8-bit eMMC 5.0
 1-channel 8-bit SDIO 3.0
 1-channel 4-bit SD 3.0
 5-channel high-speed UART (up to 3 Mbps data rate for Bluetooth 2.1 EDR and IrDA 1.0 SIR)
 3-channel SPI
 1-channel PCM and 2-channel I2S audio interface, supporting 5.1 channel audio
 1-channel S/PDIF interface support for digital audio (Tx only) 7-channel HS-I2C (up to 3.4 Mbps) for a variety
of sensors (such as ambient light sensor and proximity sensor) and PMIC
 4-channel I2C interface support (up to 400 kbps) for HDMI, general-purpose multi-master and ISP
 Security subsystem supporting hardware crypto accelerators, ARM TrustZone and TZASC
 24-channel DMA Controller (8-channel MDMA, 8 x 2 channel PDMA)
 Configurable GPIOs
 Real time clock, PLLs, timer with PWM, MCT (Multi-Core Timer), and Watchdog timer.
Internal Architecture:
Fig 4.1 Internal Architecture of Exynos 5 Octa (Exynos 5422)

17.
HKMG Transistor:
HKMG stands for High K Metal Gate and transistor is known to all. K is the dielectric
constant for various semiconductors. The term high-κ dielectric refers to a material with a
high dielectric constant κ (as compared to silicon dioxide). High-κ dielectrics are used in
semiconductor manufacturing processes where they are usually used to replace a silicon
dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ
gate dielectrics is one of several strategies developed to allow further miniaturization of
microelectronic components, colloquially referred to as extending Moore's Law.
Need for high κ materials:
Silicon dioxide has been used as a gate oxide material for decades. As
transistors have decreased in size, the thickness of the silicon dioxide gate dielectric
has steadily decreased to increase the gate capacitance and thereby drive current,
raising device performance. As the thickness scales below 2 nm, leakage currents due
to tunnelingincrease drastically, leading to high power consumption and reduced
device reliability. Replacing the silicon dioxide gate dielectric with a high-κ material
allows increased gate capacitance without the associated leakage effects.
First Principle:
The gate oxide in a MOSFET can be modeled as a parallel plate capacitor.
Ignoring quantum mechanical and depletion effects from the Si substrate and gate,
the capacitance Cof this parallel plate capacitor is given by
Where
 A is the capacitor area
 κ is the relative dielectric constant of the material (3.9 for silicon dioxide)
 ε0 is the permittivity of free space
 t is the thickness of the capacitor oxide insulator
Conventional silicon dioxide gate dielectric structure compared to a potential high-k dielectric structure

18.
Cross-section of an N channel MOSFET transistor showing the gate oxide dielectric
Since leakage limitation constrains further reduction of t, an alternative
method to increase gate capacitance is alter κ by replacing silicon dioxide with a high-
κ material. In such a scenario, a thicker gate oxide layer might be used which can
reduce the leakage current flowing through the structure as well as improving the gate
dielectric reliability.
Use in Industry:
The industry has employed oxynitride gate dielectrics since the 1990s,
wherein a conventionally formed silicon oxide dielectric is infused with a small
amount of nitrogen. The nitride content subtly raises the dielectric constant and is
thought to offer other advantages, such as resistance against dopant diffusion through
the gate dielectric.
In early 2007, Intel announced the deployment of hafnium-based high-k
dielectrics in conjunction with a metallic gate for components built on 45
nanometer technologies, and has shipped it in the 2007 processor series
codenamed Penryn. At the same time, IBM announced plans to transition to high-k
materials, also hafnium-based, for some products in 2008. While not identified, the
most likely dielectric used in such applications are some form of nitrided hafnium
silicates (HfSiON). HfO2 and HfSiO are susceptible to crystallization during dopant
activation annealing. NEC ELECTRONICS has also announced the use of an HfSiON
dielectric in their 55 nm UltimateLowPower technology. However, even HfSiON is
susceptible to trap-related leakage currents, which tend to increase with stress over
device lifetime. This leakage effect becomes more severe as hafnium concentration
increases. There is no guarantee however, that hafnium will serve as a de facto basis
for future high-k dielectrics. The 2006 ITRS roadmap predicted the implementation of
high-k materials to be commonplace in the industry by 2010.

19.
big.LITTLE Processing:
ARM big.LITTLE is a heterogeneous computing architecture developed by ARM
Holdings, coupling (relatively) slower, low-power processor cores with (relatively) more
powerful and power-hungry ones. The intention is to create a multi-core processor that can
adjust better to dynamic computing needs and use less power than clock scaling alone.
In October 2011, big.LITTLE was announced along with the Cortex-A7, which was designed
to be architecturally compatible with the Cortex-A15. In October 2012 ARM announced
the Cortex-A53 and Cortex-A57 (ARMv8-A) cores, which are also compatible with each
other to allow their use in a big.LITTLE chip. ARM later announced the Cortex-A12
at Computex 2013 followed by the Cortex-A17 in February 2014, both can also be paired in a
big.LITTLE configuration with the Cortex-A7
Implementation of big.Little:
SoC fab big cores LITTLE cores GPU Devices
HiSilicon K3V3 28 nm 1.8 GHz dual-coreCortex-A15
1.2 GHz dual-
coreCortex-A7
Mali-T658
HiSilicon Kirin
920
28 nm 1.7-2.0 GHz Cortex-A15
1.3-1.6 GHz quad-core
Cortex-A7
Mali-T628MP4 Huawei Honor 6
SAMSUNG Exyn
os 5 Octa (5410
model)[11][12]
28 nm
1.6-1.8 GHz quad-core Cortex-
A15
1.2 GHz quad-core
Cortex-A7
PowerVR SGX544MP3
Exynos 5-
basedSamsung
Galaxy S4
Samsung Exynos
5 Octa (5420
model)
28 nm
1.8-2.0 GHz quad-core Cortex-
A15
1.3 GHz quad-core
Cortex-A7
Mali-T628MP6
Exynos 5-
basedSamsung
Galaxy Note 3
Samsung Exynos
5 Octa (5422
model)
28 nm 2.1 GHz quad-core Cortex-A15
1.5 GHz quad-core
Cortex-A7
Mali-T628MP6
Exynos 5-
basedSamsung
Galaxy S5,Odroid-
XU3

20.
Samsung Exynos
5 Hexa (5260
model)
28 nm 1.7 GHz dual-core Cortex-A15
1.3 GHz quad-core
Cortex-A7
Mali-T624
Samsung Galaxy
Note 3 Neo
Samsung Exynos
5 Octa (5430
model)
20 nm 1.8 GHz quad-core Cortex-A15
1.3 GHz quad-core
Cortex-A7
Mali-T628MP6
Samsung Galaxy
Alpha[15]
Samsung Exynos
5 Octa (5433
model)
20 nm 1.9 GHz quad-core Cortex-A57
1.3 GHz quad-core
Cortex-A53
Mali-T760
Samsung Galaxy
Note 4 (SM-
N910C)
Renesas Mobile
MP6530[17]
28 nm 2 GHz dual-core Cortex-A15
1 GHz dual-core Cortex-
A7
PowerVR SGX544
Allwinner A80
Octa
28 nm Quad-core Cortex-A15 Quad-core Cortex-A7 PowerVRG6230
MediaTek MT659
5
28 nm 2.2 GHz quad-core Cortex-A17
1.7 GHz quad-core
Cortex-A7
PowerVR G6200
(600 MHz)
MediaTek
MT6595M
28 nm 2.0 GHz quad-core Cortex-A17
1.5 GHz quad-core
Cortex-A7
PowerVR G6200
(450 MHz)
MediaTek
MT6595 Turbo
28 nm 2.5 GHz quad-core Cortex-A17
1.7 GHz quad-core
Cortex-A7
PowerVR G6200
(600 MHz)

21.
Company Promoted image of Exynos 5
Qualcomm Snapd
ragon 808
(MSM8992)
20 nm 2.0 GHz dual-core Cortex-A57
Quad-core ARM Cortex-
A53
Adreno 418
Qualcomm
Snapdragon 810
(MSM8994)
20 nm 2.0 GHz quad-core Cortex-A57
Quad-core ARM Cortex-
A53
Adreno 430

22.
Chapter 6
Applications
Navigation:
Navigation devices are increasing in popularity everywhere, from cars to mobile phones,
helping people find the correct direction to a particular location or destination from a given
starting point. Advanced navigation devices also assist the disabled (such as the blind) by
reading out directions and providing other useful features. Navigation devices today rely on
satellite-based services, such as Global Positioning System (GPS), GLONASS, or Galileo to
function, but may also use other connectivity solutions, such as 3G and Wi-Fi, depending
upon the capabilities built into the device.
The GPS system uses data from a network of satellites to obtain location information
anywhere on or near the surface of earth. The 21st century has seen a remarkable increase in
the penetration of GPS based navigation services, primarily due to advances in
the ELECTRONICS and semiconductor technology space, making the availability of GPS
services on devices, such as mobile phones, possible.
The GPS technology has evolved significantly, from the simple devices that showed people
their geographical locations, to the latest ones that possess Internet access capabilities and
allow two-way communication. GPS has also been deployed in the MARKETING segment,
through the concept of "GPS Advertising" - sending custom advertising messages to select
GPS receivers.
Block Diagram for a typical navigation device.

23.
Smart Phone:
Mobile (or cellular) phones have become one of the most common communications
devices in everyday use. Apart from simple voice calls, today's mobile phones are capable of
offering many other services, such as text and multimedia messaging, entertainment
(playback of stored music and FM radio), and photography. High-end mobile phones, which
run on specially designed technology platforms and contain advanced computing and
connectivity features (such as Internet and email access), are generally known as
smartphones. With advances in all fields of technology, the line between a normal phone and
a smartphone has blurred significantly.
Samsung is the industry leader when it comes to supplying components for mobile
phones - from the most basic, entry-level instruments, to the most advanced, multi-functional
handsets that are complete computers in themselves. OEMs and designers across the globe
rely on Samsung for world-class devices and components, such as memory, processors, and
displays, to bring their designs to MARKET in the shortest time and at the lowest cost.
Block diagram of Smart Phone Architecture
Graphical performance without compromising power consumption
Low Power Multitasking
WQXGA Display in Mobile device
Incredible experience for 3D gaming

24.
References
 www.wikipedia.org
 www.samsung.com
 www.arm.com
