It is a new technology developing by Intel, one of the worlds semiconductor manufacturing company.
3D X Point is a new memory technology which would emerge soon. It is fast and efficient.
4. INTRODUCTION
• The 3D XPoint technology is an entirely new class of nonvolatile
memory.
• Developed by Intel and Micron.
• The 3D XPoint innovative, transistor-less cross point architecture.
5. HISTORY
• The development of 3D XPoint began around 2005.
• It’s the breakthrough in memory technology after 25years.
• The last was NAND Flash Memory.
7. DEVELOPERS
• Intel Corporation (commonly referred to as Intel) is an American
multinational technology company.
• It was founded on July 18, 1968. Which also makes
motherboard chipsets and integrated.
• Intel has recently introduced a 3-D transistor that improves performance
and energy efficiency.
Intel
8. • Micron Technology, Inc. is an American multinational corporation.
• Which produces many forms of semiconductor devices,
including dynamic random access memory, flash memory, and solid
state drivers.
• Micron Technology is also ranked among the Top 5
semiconductor producing companies in the world.
DEVELOPERS
Micron
10. MEMORY
• Memory is the process in which information is encoded, stored, and
retrieved.
• It is the basic element of a digital equipment.
• In the digital devices the memory can be volatile and non volatile
12. Volatile Memory
• Volatile memory is computer storage that only maintains its data
while the device is powered.
• Most RAM (random access memory) used for primary storage in
personal computers is volatile memory.
14. Non-Volatile Memory
• Non-volatile storage is computer that can retrieve stored information
even after having been power cycled (turned off and back on).
• It is typically used for the task of secondary storage, or long-term
persistent storage.
17. 3D XPoint
• 3D XPoint is a resistance based technology that works by a bulk
property change to alter the resistance level of a cell and thus
differentiate between a 0 and 1.
• The structure is very simple. It consists of a selector and memory
cell, which sit in between a word line and bit line.
• Intel and Micron wouldn't disclose any internal read/write
voltages, but we were told that the voltages are considerably
lower than in NAND.
25. NAND
• Expensive, Non-Volatile
• Used in SSDs, Very fast
• 1,300 x faster than Hard Drives
• But 1,500 x slower than DRAM
DRAM
• Expensive, Volatile
• Used in PCs, Fast
• Transistors are used
• Larger
30. REFERENCE
Clarke, Peter "Patent Search Supports View 3D XPoint Based on Phase-Change“
"3D XPoint™ Technology Revolutionizes Storage Memory“ from YouTube.
3D XPoint from Wikipedia.