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OVERVIEW OF ADVANCED THERMAL MATERIALS


                  Carl Zweben, PhD
                       Life Fellow ASME
                   Fellow SAMPE and ASM
                   Associate Fellow, AIAA
         Advanced Thermal Materials Consultant
                      62 Arlington Road
                    Devon, PA 19333-1538
                     Phone: 610-688-1772
                 E-mail: c.h.zweben@usa.net
      http://sites.google.com/site/zwebenconsulting



                    Copyright Carl Zweben 2010        1
The information in these slides is part of a short
 course on composite materials that is presented
              publicly and in-house

        Contact author for information




                 Copyright Carl Zweben 2010          2
OUTLINE


• Introduction
• Semiconductors, ceramic substrates and
  traditional thermal materials
• Advanced thermal materials
• Applications
• Summary and conclusions
• Appendix (terminology and abbreviations)




                  Copyright Carl Zweben 2010   3
INTRODUCTION




  Copyright Carl Zweben 2010   4
INTRODUCTION

• Critical thermal management problems:
   – Heat dissipation
   – Thermal stresses cause
       • Warping, fracture, fatigue, solder creep
       • Primarily due to CTE mismatch
       • An issue for all cooling methods
• Problems similar for
   – Microprocessors, power modules, RF
   – Diode lasers
   – Light-emitting diodes (LEDs)
   – Plasma and LCD displays
   – Photovoltaics
   – Thermoelectric coolers (TECs)
                    Copyright Carl Zweben 2010      5
INTRODUCTION (cont)

• Microelectronic thermal problems well known
   – Xbox 360 $1 billion “Red Ring of Death” failure
     widely cited as thermal issue
   – Nvidia $150-200 million GPU thermal problem
   – “Burned groin blamed on laptop” (BBC 11//02)
• Solder thermal fatigue limits laser pulsing
• Higher process temperatures for lead-free solders
   – Increased thermal stresses & warping
• Higher ambient temperatures
   – E.g. automotive under hood


                    Copyright Carl Zweben 2010         6
INTRODUCTION (cont)

• Weight (mass) important
   – Portable systems
   – Vibration and shock loads
• Volume and thickness decreasing
• Cooling significant part of total cost of ownership
   – System
   – Building, data center
• System cooling power increases building cooling
  load
• Low-CTE “Thermount” PCB withdrawn from
  market in 2006
   – No current thin-ply replacement

                   Copyright Carl Zweben 2010       7
INTRODUCTION (cont)

• Traditional thermal materials inadequate
   – Decades old: mid 20th Century
   – Impose major design limitations (see later)
• In response to critical needs, an increasing number
  of advanced materials have been developed
• Many with ultrahigh-thermal-conductivity
   – k = 400 to 1700 W/m-K
   – Low CTEs
   – Low densities
   – R&D to high-volume production



                   Copyright Carl Zweben 2010       8
INTRODUCTION (cont)

• Can now match CTEs of chips, lids, heat sinks, and
  PCBs
   – Reduces thermal stresses and warping
   – Possibly eliminates need for underfill
   – Enables use of hard solder attach
      • Low thermal resistance
   – Low-CTE solders under development
• Thermally conductive PCBs provide heat path




                   Copyright Carl Zweben 2010      9
CTE MISMATCH CAUSES THERMAL STRESSES




            Copyright Carl Zweben 2010   10
PACKAGING LEVELS




                          Source: USAF (modified)
  Copyright Carl Zweben 2010                        11
SEMICONDUCTORS, CERAMIC
SUBSTRATES AND TRADITIONAL
    THERMAL MATERIALS




         Copyright Carl Zweben 2010   12
SEMICONDUCTOR AND CERAMIC SUBSTRATE
            PROPERTIES
    MATERIAL                 CTE (ppm/K)
    Silicon                    2.5-4.1
    GaAs                       5.8-6.9
    GaP                          5.9
    InP                        4.5-4.8
    SiC                        4.2-4.9
    Alumina (96%)              6.0-7.1
    AlN                        3.5-5.7
    BeO                          6-9
    LTCC                         5.8

       CTE RANGE ~ 2 – 7 ppm/K
             Copyright Carl Zweben 2010    13
TRADITIONAL THERMAL AND PACKAGING MATERIALS
                       k      CTE Specific  k/SG
  MATERIAL        (W/m-K) (ppm/K) Gravity (W/m-K)
  Copper             400        17    8.9    45
  Aluminum           218        23    2.7    81
  “Kovar”             17       5.9    8.3     2
  Alloy 42          10.5       5.3    8.1    1.3
  W/Cu (85/15)       167       6.5    17     10
  Mo/Cu (85/15)      184       7.0    10     18
  Cu-Invar-Cu*      172*      6.7*    8.4    20
  Cu-Mo-Cu*         182*      6.0*    9.9    18
  E-glass/epoxy      0.3*    12-24* 1.6-1.9  0.2
  Epoxy              0.2     45-65    1.3    0.2
       *Inplane isotropic (x,y)
                  Copyright Carl Zweben 2010    14
WHAT’S WRONG WITH TRADITIONAL THERMAL
               MATERIALS?
• Copper and aluminum
   – High CTEs
      • Thermal stresses, warping
      • Require compliant polymeric and solder
        thermal interface materials (TIMs)
   – Higher thermal conductivities desirable
   – Copper has high density
• What’s wrong with compliant polymeric TIMs?
   – Pump-out and dry-out for greases
   – High thermal resistance for most
   – Increasingly, the key contributor to total thermal
     resistance
                    Copyright Carl Zweben 2010       15
WHAT’S WRONG WITH TRADITIONAL THERMAL
            MATERIALS? (cont)

• What’s wrong with compliant solders?
  – E.g. indium alloys
  – Process problems (voiding, poor wetting)
  – Poor fatigue life (low yield stress)
  – Creep
  – Intermetallics
  – Corrosion
  – Electromigration
  – Relatively low melting point
  – Cost higher than many solders

DIRECT ATTACH WITH HARD SOLDERS DESIRABLE

                   Copyright Carl Zweben 2010   16
WHAT’S WRONG WITH TRADITIONAL THERMAL
           MATERIALS? (cont)

• Low-CTE materials seriously deficient
   – E.g. alloy 42, Kovar, tungsten/copper,
     molybdenum/copper, copper-Invar-copper, etc.
   – Conductivities < aluminum (200 W/m-K)
   – High densities
   – High cost
• CVD diamond
   – High thermal conductivity
   – Low CTE
   – Expensive
   – Thin flat plates only (i.e. CVD diamond films)

                  Copyright Carl Zweben 2010      17
ADVANCED THERMAL MATERIALS




         Copyright Carl Zweben 2010   18
NEW THERMAL MANAGEMENT MATERIALS

• Many advanced materials
   – Various stages of development
   – R&D to large scale production
   – New ones continuously emerging
• Monolithic materials
   – Primarily carbonaceous (graphitic)
• Composites
   – Polymer matrix
   – Metal matrix
   – Metal/metal alloys-composites
   – Carbon matrix (e.g. carbon/carbon)
   – Ceramic matrix

                  Copyright Carl Zweben 2010   19
NEW THERMAL MANAGEMENT MATERIALS (cont)

• Al/SiC first, and most successful advanced thermal
  material
   – First used by speaker and colleagues at GE for
     electronics and optoelectronics in early 1980s
   – New processes developed
   – Millions of piece parts produced annually
   – Part cost dropped by orders of magnitude
   – Microprocessor lids now $1-5 in high volume
   – CVD diamond and highly-oriented pyrolytic
     graphite inserts increase heat spreading
      • “Hybrid materials” approach


                   Copyright Carl Zweben 2010     20
SiC-PARTICLE/ALUMINUM (Al/SiC) SUPPLIERS

           v/o        k       CTE    Specific
Supplier   (%)     (W/m-K) (ppm/K) Gravity
Ametek      68       220       7.5      3.03
CPS         63       200       8.0      3.01
DWA         55       200       8.8      3.00
Denka        -       200       7.5      2.96
MC-21     20-45    150-180   10-16    2.7-2.9
PCC-AFT*    70       175        7       3.01
Sumitomo     -     150-200    8-15   2.60-2.78
TTC          -     165-255 4.8-16.2 2.77-3.10
    *Purchased by Rogers Corporation

                 Copyright Carl Zweben 2010      21
ADVANCED MATERIALS PAYOFFS

• Lower junction temperatures
• Reduced thermal stresses and warpage
• Simplified thermal design
   – Possible elimination of fans, heat pipes, TECs,
     liquid cooling, refrigeration
• Increased reliability
• Improved performance
• Weight savings up to 90%
• Size reductions up to 65%
• Dimensional stability
• Improved optical alignment


                   Copyright Carl Zweben 2010      22
ADVANCED MATERIALS PAYOFFS (cont)

• Possible elimination of underfill
• Increased manufacturing yield
• Reduced electromagnetic emission
• Reduced power consumption
• Longer battery life
• Reduced number of devices (e.g. power modules,
  LEDs)
• Low cost potential
   – Component
   – System
   – Total cost of ownership (TCO)

                 Copyright Carl Zweben 2010    23
DISADVANTAGES OF SOME ADVANCED MATERIALS

•   Higher cost (low volumes, reinforcements)
•   Limited service experience
•   Low fracture toughness
•   Possible hysteresis
•   Ceramic materials hard to machine
•   Some particulate materials hard to metallize
•   Surface roughness and flatness
•   Edge sharpness (laser diodes)
•   Direct attach during infiltration complicates rework
•   Galvanic corrosion potential
•   Porosity (not hermetic)


                      Copyright Carl Zweben 2010      24
COMPOSITE MATERIAL REINFORCEMENTS

                               Discontinuous Fibers,
 Continuous Fibers                  Whiskers




       Particles                         Fabrics, Braids, etc.




            Copyright Carl Zweben 2010                      25
CTE OF SILICON-CARBIDE-PARTICLE-REINFORCED
ALUMINUM (Al/SiC) vs PARTICLE VOLUME FRACTION

                         25       Aluminum
COEFFICIENT OF THERMAL



                                                                          Powder Metallurgy
  EXPANSION (ppm/K)




                         20                                               Infiltration
                                  Copper
                                                      E-glass PCB
                         15                                                  Beryllium

                         10                                                   NEW MATERIAL
                                  Titanium, Steel
                                  Alumina
                          5
                                  Silicon

                          0
                              0       20         40            60            80      100
                                   PARTICLE VOLUME FRACTION (%)

                                             Copyright Carl Zweben 2010                       26
THERMAL CONDUCTIVITY vs CTE FOR
                                        PACKAGING MATERIALS

                                                                   1200            Si, GaAs, Silica, Alumina, Beryllia,
THERMAL CONDUCTIVITY (W/mK)


                                                                                        Aluminum Nitride, LTCC
                              600
                                           HOPG
                                           (1700)
                              500                                                          Diamond-Particle-Reinforced Metals
                                                                                                    and Ceramics
                                                                      C/Cu                                   Silver
                              400
                                         C/C                                                          Copper
                                                                          SiC/Cu
                              300        C/Ep               C/Al
                                                                                                               Aluminum

                              200                            Cu/W                                         SiC/Al (Al/SiC)

                                                                                                  Si-Al
                              100
                                                    Invar          Kovar
                                                                                        E-glass PCB
                               0
                                    -5       0       5     10     15     20     25
                                         COEFFICIENT OF THERMAL EXPANSION (ppm/K)
                                                             Copyright Carl Zweben 2010                                     27
SPECIFIC PROPERTIES

• Specific property is absolute property divided by
  density
• Figure of merit when weight is important
• If specific gravity (S.G.) is used for density,
  absolute and specific properties have same units,
  e.g.
   – Thermal conductivity, k = W/m-K
   – Specific thermal conductivity, k/S.G = W/m-K




                   Copyright Carl Zweben 2010         28
SPECIFIC THERM. COND. vs CTE FOR PACKAGING MATERIALS
                                                                     670
                                350
SPECIFIC THERMAL CONDUCTIVITY
                                                                                           Si, GaAs, Silica, Alumina, Beryllia,
                                                                                                Aluminum Nitride, LTCC




                                             HOPG (740)
                                300
                                                                                   Diamond-Particle-Reinforced Metals
                                                                                            and Ceramics
                                250
                                           C/C
            (W/mK)




                                200
                                           C/Ep                                                        SiC/Al (Al/SiC)
                                150
                                                                                   C/Al
                                                                                                                         Aluminum
                                100          C/Cu

                                                          Si-Al
                                 50                                                                                Copper
                                              Invar          Kovar
                                                                                          Cu/W
                                 0
                                      -5        0       5      10    15     20      25
                                           COEFFICIENT OF THERMAL EXPANSION (ppm/K)
                                                                  Copyright Carl Zweben 2010                                        29
MODERATE-THERMAL-CONDUCTIVITY MATERIALS
                (k < 300)
                          k         CTE               Specific     k/SG
MATERIAL              (W/m-K)     (ppm/K)             Gravity    (W/m-K)
Copper                  400          17                  8.9        45
Industrial Gr            95          7.9                 1.8        53
Carbon Foam*          135-145        -1                0.6-0.9   220-270
Disc. CF/Ep*           20-290        4-7               1.6-1.8    12-160
SiC/Al (Al/SiC)       170-255     4.8-16.2             2.9-3.0     57-85
Cont. CF/Al*          218-290       0-16               2.3-2.6    84-126
Disc. CF/Al*            185          6.0                 2.5        74
Industrial Gr/Cu        175          8.7                 3.1         56
Beryllia/Be             240          6.1                 2.6         92
Be/Al                   210         13.9                 2.1        100
Silver/Invar            153          6.5                 8.8         17
Si-Al                 126-160      6.5-14              2.5-2.6     49-63
           * Inplane isotropic values
                         Copyright Carl Zweben 2010                        30
HIGH-THERMAL-CONDUCTIVITY MATERIALS
                  (300 < k < 400)

                                      k            CTE          Specific        k/SG
MATERIAL                         (W/mK)          (ppm/K) Gravity (W/mK)
Copper                              400              17            8.9            45
Natural Graphite/Ep*                370             -2.4           1.9           190
Cont. CF/Ep*                        330              -1            1.8           183
Disc. CF/Cu*                        300           6.5-9.5          6.8            44
Carbon/carbon*                      350             -1.0           1.9       210 (363)
------------------------------------------------------------------------------------------
Graphite Foam/Cu                   342**             7.4           5.7            60
SiC/Cu                              320           7-10.9           6.6            48
     Materials below line are experimental
     * Inplane isotropic values
     ** k(z)

                                  Copyright Carl Zweben 2010                             31
ULTRAHIGH-THERMAL-CONDUCTIVITY MATERIALS
             (k > 400) – Part 1
                                 k               CTE          Specific       k/SG
MATERIAL                      (W/m-K)          (ppm/K)        Gravity       (W/m-K)
Copper                          400               17            8.9           45
CVD Diamond                 500-2200**             1-2           3.5        143-629
HOPG*                       1500-1700               -1           2.3        650-740
Natural Graphite*             140-500+            -0.4         1.1-1.9       127-263
------------------------------------------------------------------------------------------
Cont. CF/Cu*                  400-420             0-16        5.3-8.2         49-79
Gr Flake/Al*                  400-600            4.5-5.0         2.3        174-260
GR particle/Al*               650-700              4-7           2.3        283-304
    Materials below line are experimental
    * Inplane isotropic values                ** k(z) – somewhat anisotropic


                                 Copyright Carl Zweben 2010                             32
ULTRAHIGH-THERMAL-CONDUCTIVITY MATERIALS
             (k > 400) – Part 2
                               k                  CTE          Specific       k/SG
MATERIAL                    (W/m-K)             (ppm/K)        Gravity       (W/m-K)
Copper                        400                  17            8.9           45
Diamond/Al                   325-600               7-9           3-4          93-171
Diamond/Cu                  400-1200               5-8          5.5-7         62-185
Diamond/Co                     >600                 3.0          4.1           >146
Diamond/Ag                   550-650              5-8             6-7         85-100
Diamond/SiC                  600-680              1.8             3.3        182-206
------------------------------------------------------------------------------------------
Diamond/Si                      525               4.5              -              -
Diamond/Mg                      575                 5.5            -              -
Diamond+SiC/Al                  575                  5             -              -
     Materials below line are experimental

                                  Copyright Carl Zweben 2010                             33
EXPERIMENTAL LOW-CTE COMPOSITE SOLDER

   Wt % Mo               CTE                     Thermal
                       (ppm/K)                 Conductivity
                                                 (W/m-K)
      0                     21                     55
      20                    15                     68
      40                     8                     76
      60                    5.2                    97
     100                    5.1                    137
Matrix: Sn96.5Ag3.5

                        Lewis, Ingham and Laughlin, Cookson

                  Copyright Carl Zweben 2010                  34
APPLICATIONS




  Copyright Carl Zweben 2010   35
APPLICATIONS

• Microelectronic applications
   – CPU, RF, Power, etc.
• Optoelectronic applications
   – LEDs
   – Diode Lasers
   – Displays
   – Detector/sensors
   – Photovoltaics
   – Thermoelectric coolers
• Thermally conductive, low-CTE printed circuit
  boards
• Advanced thermal interface materials
                  Copyright Carl Zweben 2010      36
THE FIRST SILICON-CARBIDE-PARTICLE-
REINFORCED (AL/SiC) MMC MICROWAVE PACKAGE




                                            Source: GE
               Copyright Carl Zweben 2010            37
SUMMARY AND CONCLUSIONS




       Copyright Carl Zweben 2010   38
SUMMARY AND CONCLUSIONS

• Thermal management now critical problem for
  microelectronics and optoelectronics
• Traditional thermal materials inadequate
   – Mid-20th century
• Low-CTE, low-density materials with thermal
  conductivities up to 1700 W/m-K available
• Can now match CTEs of chips, lids, heat sinks,
  and PCBs
   – Reduces thermal stresses and warping
   – Possibly eliminates need for underfill
   – Enables use of hard solder attach
      • Low thermal resistance

                  Copyright Carl Zweben 2010       39
SUMMARY AND CONCLUSIONS (cont)

• Several advanced materials well established
   – SiC particle/aluminum
   – Silicon-aluminum
   – Carbon fiber/polymer
   – Natural graphite
   – Pyrolytic graphite sheet
   – Highly-oriented pyrolytic graphite
• Diamond composites used in production
  microelectronic and optoelectronic systems
• Short (2-3 year) cycle from introduction to
  production demonstrated
• Applications increasing steadily

                   Copyright Carl Zweben 2010   40
WE ARE THE INFANCY OF A
PACKAGING MATERIALS REVOLUTION




          Copyright Carl Zweben 2010   41
APPENDIX




Copyright Carl Zweben 2010   42
TERMINOLOGY

• Homogeneous
   – Properties constant throughout material
• Heterogeneous
   – Properties vary throughout material
   – E.g. different in matrix and reinforcement
   – Composites always heterogeneous
• Isotropic
   – Properties the same in every direction
• Anisotropic
   – Properties vary with direction
• Inplane isotropic (transversely isotropic)
   – Properties the same for every direction in a
     plane (different perpendicular to the plane)
                    Copyright Carl Zweben 2010      43
ABBREVIATIONS

•   C: carbon
•   CAMC: carbon matrix composite
•   CCC: carbon/carbon composite
•   C/C: carbon/carbon
•   CF - carbon fiber
•   CMC: ceramic matrix composite
•   Cond: conductivity
•   Cont: continuous
•   CTE: coefficient of thermal expansion
•   Dens: density
•   Disc: discontinuous


                    Copyright Carl Zweben 2010   44
ABBREVIATIONS (cont)

•   Elect: Electrical
•   Ep: epoxy
•   HOPG: highly oriented pyrolytic graphite
•   Gr: graphite
•   MMC: metal matrix composite
•   PAN: polyacrylonitrile
•   PCB: printed circuit board
•   Pitch: carbonaceous petroleum or coal byproduct
•   PMC: polymer matrix composite
•   LTCC: low-temperature cofired ceramic
•   Mod: modulus

                    Copyright Carl Zweben 2010        45
ABBREVIATIONS (cont)


•   PGS: pyrolytic graphite sheet
•   SG, S.G.: specific gravity
•   SiCp: Silicon carbide particle
•   TEC: thermoelectric cooler
•   Therm: thermal
•   UHM: ultrahigh modulus
•   UHS: ultrahigh strength




                      Copyright Carl Zweben 2010   46

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Overview of Advanced Thermal Materials

  • 1. OVERVIEW OF ADVANCED THERMAL MATERIALS Carl Zweben, PhD Life Fellow ASME Fellow SAMPE and ASM Associate Fellow, AIAA Advanced Thermal Materials Consultant 62 Arlington Road Devon, PA 19333-1538 Phone: 610-688-1772 E-mail: c.h.zweben@usa.net http://sites.google.com/site/zwebenconsulting Copyright Carl Zweben 2010 1
  • 2. The information in these slides is part of a short course on composite materials that is presented publicly and in-house Contact author for information Copyright Carl Zweben 2010 2
  • 3. OUTLINE • Introduction • Semiconductors, ceramic substrates and traditional thermal materials • Advanced thermal materials • Applications • Summary and conclusions • Appendix (terminology and abbreviations) Copyright Carl Zweben 2010 3
  • 4. INTRODUCTION Copyright Carl Zweben 2010 4
  • 5. INTRODUCTION • Critical thermal management problems: – Heat dissipation – Thermal stresses cause • Warping, fracture, fatigue, solder creep • Primarily due to CTE mismatch • An issue for all cooling methods • Problems similar for – Microprocessors, power modules, RF – Diode lasers – Light-emitting diodes (LEDs) – Plasma and LCD displays – Photovoltaics – Thermoelectric coolers (TECs) Copyright Carl Zweben 2010 5
  • 6. INTRODUCTION (cont) • Microelectronic thermal problems well known – Xbox 360 $1 billion “Red Ring of Death” failure widely cited as thermal issue – Nvidia $150-200 million GPU thermal problem – “Burned groin blamed on laptop” (BBC 11//02) • Solder thermal fatigue limits laser pulsing • Higher process temperatures for lead-free solders – Increased thermal stresses & warping • Higher ambient temperatures – E.g. automotive under hood Copyright Carl Zweben 2010 6
  • 7. INTRODUCTION (cont) • Weight (mass) important – Portable systems – Vibration and shock loads • Volume and thickness decreasing • Cooling significant part of total cost of ownership – System – Building, data center • System cooling power increases building cooling load • Low-CTE “Thermount” PCB withdrawn from market in 2006 – No current thin-ply replacement Copyright Carl Zweben 2010 7
  • 8. INTRODUCTION (cont) • Traditional thermal materials inadequate – Decades old: mid 20th Century – Impose major design limitations (see later) • In response to critical needs, an increasing number of advanced materials have been developed • Many with ultrahigh-thermal-conductivity – k = 400 to 1700 W/m-K – Low CTEs – Low densities – R&D to high-volume production Copyright Carl Zweben 2010 8
  • 9. INTRODUCTION (cont) • Can now match CTEs of chips, lids, heat sinks, and PCBs – Reduces thermal stresses and warping – Possibly eliminates need for underfill – Enables use of hard solder attach • Low thermal resistance – Low-CTE solders under development • Thermally conductive PCBs provide heat path Copyright Carl Zweben 2010 9
  • 10. CTE MISMATCH CAUSES THERMAL STRESSES Copyright Carl Zweben 2010 10
  • 11. PACKAGING LEVELS Source: USAF (modified) Copyright Carl Zweben 2010 11
  • 12. SEMICONDUCTORS, CERAMIC SUBSTRATES AND TRADITIONAL THERMAL MATERIALS Copyright Carl Zweben 2010 12
  • 13. SEMICONDUCTOR AND CERAMIC SUBSTRATE PROPERTIES MATERIAL CTE (ppm/K) Silicon 2.5-4.1 GaAs 5.8-6.9 GaP 5.9 InP 4.5-4.8 SiC 4.2-4.9 Alumina (96%) 6.0-7.1 AlN 3.5-5.7 BeO 6-9 LTCC 5.8 CTE RANGE ~ 2 – 7 ppm/K Copyright Carl Zweben 2010 13
  • 14. TRADITIONAL THERMAL AND PACKAGING MATERIALS k CTE Specific k/SG MATERIAL (W/m-K) (ppm/K) Gravity (W/m-K) Copper 400 17 8.9 45 Aluminum 218 23 2.7 81 “Kovar” 17 5.9 8.3 2 Alloy 42 10.5 5.3 8.1 1.3 W/Cu (85/15) 167 6.5 17 10 Mo/Cu (85/15) 184 7.0 10 18 Cu-Invar-Cu* 172* 6.7* 8.4 20 Cu-Mo-Cu* 182* 6.0* 9.9 18 E-glass/epoxy 0.3* 12-24* 1.6-1.9 0.2 Epoxy 0.2 45-65 1.3 0.2 *Inplane isotropic (x,y) Copyright Carl Zweben 2010 14
  • 15. WHAT’S WRONG WITH TRADITIONAL THERMAL MATERIALS? • Copper and aluminum – High CTEs • Thermal stresses, warping • Require compliant polymeric and solder thermal interface materials (TIMs) – Higher thermal conductivities desirable – Copper has high density • What’s wrong with compliant polymeric TIMs? – Pump-out and dry-out for greases – High thermal resistance for most – Increasingly, the key contributor to total thermal resistance Copyright Carl Zweben 2010 15
  • 16. WHAT’S WRONG WITH TRADITIONAL THERMAL MATERIALS? (cont) • What’s wrong with compliant solders? – E.g. indium alloys – Process problems (voiding, poor wetting) – Poor fatigue life (low yield stress) – Creep – Intermetallics – Corrosion – Electromigration – Relatively low melting point – Cost higher than many solders DIRECT ATTACH WITH HARD SOLDERS DESIRABLE Copyright Carl Zweben 2010 16
  • 17. WHAT’S WRONG WITH TRADITIONAL THERMAL MATERIALS? (cont) • Low-CTE materials seriously deficient – E.g. alloy 42, Kovar, tungsten/copper, molybdenum/copper, copper-Invar-copper, etc. – Conductivities < aluminum (200 W/m-K) – High densities – High cost • CVD diamond – High thermal conductivity – Low CTE – Expensive – Thin flat plates only (i.e. CVD diamond films) Copyright Carl Zweben 2010 17
  • 18. ADVANCED THERMAL MATERIALS Copyright Carl Zweben 2010 18
  • 19. NEW THERMAL MANAGEMENT MATERIALS • Many advanced materials – Various stages of development – R&D to large scale production – New ones continuously emerging • Monolithic materials – Primarily carbonaceous (graphitic) • Composites – Polymer matrix – Metal matrix – Metal/metal alloys-composites – Carbon matrix (e.g. carbon/carbon) – Ceramic matrix Copyright Carl Zweben 2010 19
  • 20. NEW THERMAL MANAGEMENT MATERIALS (cont) • Al/SiC first, and most successful advanced thermal material – First used by speaker and colleagues at GE for electronics and optoelectronics in early 1980s – New processes developed – Millions of piece parts produced annually – Part cost dropped by orders of magnitude – Microprocessor lids now $1-5 in high volume – CVD diamond and highly-oriented pyrolytic graphite inserts increase heat spreading • “Hybrid materials” approach Copyright Carl Zweben 2010 20
  • 21. SiC-PARTICLE/ALUMINUM (Al/SiC) SUPPLIERS v/o k CTE Specific Supplier (%) (W/m-K) (ppm/K) Gravity Ametek 68 220 7.5 3.03 CPS 63 200 8.0 3.01 DWA 55 200 8.8 3.00 Denka - 200 7.5 2.96 MC-21 20-45 150-180 10-16 2.7-2.9 PCC-AFT* 70 175 7 3.01 Sumitomo - 150-200 8-15 2.60-2.78 TTC - 165-255 4.8-16.2 2.77-3.10 *Purchased by Rogers Corporation Copyright Carl Zweben 2010 21
  • 22. ADVANCED MATERIALS PAYOFFS • Lower junction temperatures • Reduced thermal stresses and warpage • Simplified thermal design – Possible elimination of fans, heat pipes, TECs, liquid cooling, refrigeration • Increased reliability • Improved performance • Weight savings up to 90% • Size reductions up to 65% • Dimensional stability • Improved optical alignment Copyright Carl Zweben 2010 22
  • 23. ADVANCED MATERIALS PAYOFFS (cont) • Possible elimination of underfill • Increased manufacturing yield • Reduced electromagnetic emission • Reduced power consumption • Longer battery life • Reduced number of devices (e.g. power modules, LEDs) • Low cost potential – Component – System – Total cost of ownership (TCO) Copyright Carl Zweben 2010 23
  • 24. DISADVANTAGES OF SOME ADVANCED MATERIALS • Higher cost (low volumes, reinforcements) • Limited service experience • Low fracture toughness • Possible hysteresis • Ceramic materials hard to machine • Some particulate materials hard to metallize • Surface roughness and flatness • Edge sharpness (laser diodes) • Direct attach during infiltration complicates rework • Galvanic corrosion potential • Porosity (not hermetic) Copyright Carl Zweben 2010 24
  • 25. COMPOSITE MATERIAL REINFORCEMENTS Discontinuous Fibers, Continuous Fibers Whiskers Particles Fabrics, Braids, etc. Copyright Carl Zweben 2010 25
  • 26. CTE OF SILICON-CARBIDE-PARTICLE-REINFORCED ALUMINUM (Al/SiC) vs PARTICLE VOLUME FRACTION 25 Aluminum COEFFICIENT OF THERMAL Powder Metallurgy EXPANSION (ppm/K) 20 Infiltration Copper E-glass PCB 15 Beryllium 10 NEW MATERIAL Titanium, Steel Alumina 5 Silicon 0 0 20 40 60 80 100 PARTICLE VOLUME FRACTION (%) Copyright Carl Zweben 2010 26
  • 27. THERMAL CONDUCTIVITY vs CTE FOR PACKAGING MATERIALS 1200 Si, GaAs, Silica, Alumina, Beryllia, THERMAL CONDUCTIVITY (W/mK) Aluminum Nitride, LTCC 600 HOPG (1700) 500 Diamond-Particle-Reinforced Metals and Ceramics C/Cu Silver 400 C/C Copper SiC/Cu 300 C/Ep C/Al Aluminum 200 Cu/W SiC/Al (Al/SiC) Si-Al 100 Invar Kovar E-glass PCB 0 -5 0 5 10 15 20 25 COEFFICIENT OF THERMAL EXPANSION (ppm/K) Copyright Carl Zweben 2010 27
  • 28. SPECIFIC PROPERTIES • Specific property is absolute property divided by density • Figure of merit when weight is important • If specific gravity (S.G.) is used for density, absolute and specific properties have same units, e.g. – Thermal conductivity, k = W/m-K – Specific thermal conductivity, k/S.G = W/m-K Copyright Carl Zweben 2010 28
  • 29. SPECIFIC THERM. COND. vs CTE FOR PACKAGING MATERIALS 670 350 SPECIFIC THERMAL CONDUCTIVITY Si, GaAs, Silica, Alumina, Beryllia, Aluminum Nitride, LTCC HOPG (740) 300 Diamond-Particle-Reinforced Metals and Ceramics 250 C/C (W/mK) 200 C/Ep SiC/Al (Al/SiC) 150 C/Al Aluminum 100 C/Cu Si-Al 50 Copper Invar Kovar Cu/W 0 -5 0 5 10 15 20 25 COEFFICIENT OF THERMAL EXPANSION (ppm/K) Copyright Carl Zweben 2010 29
  • 30. MODERATE-THERMAL-CONDUCTIVITY MATERIALS (k < 300) k CTE Specific k/SG MATERIAL (W/m-K) (ppm/K) Gravity (W/m-K) Copper 400 17 8.9 45 Industrial Gr 95 7.9 1.8 53 Carbon Foam* 135-145 -1 0.6-0.9 220-270 Disc. CF/Ep* 20-290 4-7 1.6-1.8 12-160 SiC/Al (Al/SiC) 170-255 4.8-16.2 2.9-3.0 57-85 Cont. CF/Al* 218-290 0-16 2.3-2.6 84-126 Disc. CF/Al* 185 6.0 2.5 74 Industrial Gr/Cu 175 8.7 3.1 56 Beryllia/Be 240 6.1 2.6 92 Be/Al 210 13.9 2.1 100 Silver/Invar 153 6.5 8.8 17 Si-Al 126-160 6.5-14 2.5-2.6 49-63 * Inplane isotropic values Copyright Carl Zweben 2010 30
  • 31. HIGH-THERMAL-CONDUCTIVITY MATERIALS (300 < k < 400) k CTE Specific k/SG MATERIAL (W/mK) (ppm/K) Gravity (W/mK) Copper 400 17 8.9 45 Natural Graphite/Ep* 370 -2.4 1.9 190 Cont. CF/Ep* 330 -1 1.8 183 Disc. CF/Cu* 300 6.5-9.5 6.8 44 Carbon/carbon* 350 -1.0 1.9 210 (363) ------------------------------------------------------------------------------------------ Graphite Foam/Cu 342** 7.4 5.7 60 SiC/Cu 320 7-10.9 6.6 48 Materials below line are experimental * Inplane isotropic values ** k(z) Copyright Carl Zweben 2010 31
  • 32. ULTRAHIGH-THERMAL-CONDUCTIVITY MATERIALS (k > 400) – Part 1 k CTE Specific k/SG MATERIAL (W/m-K) (ppm/K) Gravity (W/m-K) Copper 400 17 8.9 45 CVD Diamond 500-2200** 1-2 3.5 143-629 HOPG* 1500-1700 -1 2.3 650-740 Natural Graphite* 140-500+ -0.4 1.1-1.9 127-263 ------------------------------------------------------------------------------------------ Cont. CF/Cu* 400-420 0-16 5.3-8.2 49-79 Gr Flake/Al* 400-600 4.5-5.0 2.3 174-260 GR particle/Al* 650-700 4-7 2.3 283-304 Materials below line are experimental * Inplane isotropic values ** k(z) – somewhat anisotropic Copyright Carl Zweben 2010 32
  • 33. ULTRAHIGH-THERMAL-CONDUCTIVITY MATERIALS (k > 400) – Part 2 k CTE Specific k/SG MATERIAL (W/m-K) (ppm/K) Gravity (W/m-K) Copper 400 17 8.9 45 Diamond/Al 325-600 7-9 3-4 93-171 Diamond/Cu 400-1200 5-8 5.5-7 62-185 Diamond/Co >600 3.0 4.1 >146 Diamond/Ag 550-650 5-8 6-7 85-100 Diamond/SiC 600-680 1.8 3.3 182-206 ------------------------------------------------------------------------------------------ Diamond/Si 525 4.5 - - Diamond/Mg 575 5.5 - - Diamond+SiC/Al 575 5 - - Materials below line are experimental Copyright Carl Zweben 2010 33
  • 34. EXPERIMENTAL LOW-CTE COMPOSITE SOLDER Wt % Mo CTE Thermal (ppm/K) Conductivity (W/m-K) 0 21 55 20 15 68 40 8 76 60 5.2 97 100 5.1 137 Matrix: Sn96.5Ag3.5 Lewis, Ingham and Laughlin, Cookson Copyright Carl Zweben 2010 34
  • 35. APPLICATIONS Copyright Carl Zweben 2010 35
  • 36. APPLICATIONS • Microelectronic applications – CPU, RF, Power, etc. • Optoelectronic applications – LEDs – Diode Lasers – Displays – Detector/sensors – Photovoltaics – Thermoelectric coolers • Thermally conductive, low-CTE printed circuit boards • Advanced thermal interface materials Copyright Carl Zweben 2010 36
  • 37. THE FIRST SILICON-CARBIDE-PARTICLE- REINFORCED (AL/SiC) MMC MICROWAVE PACKAGE Source: GE Copyright Carl Zweben 2010 37
  • 38. SUMMARY AND CONCLUSIONS Copyright Carl Zweben 2010 38
  • 39. SUMMARY AND CONCLUSIONS • Thermal management now critical problem for microelectronics and optoelectronics • Traditional thermal materials inadequate – Mid-20th century • Low-CTE, low-density materials with thermal conductivities up to 1700 W/m-K available • Can now match CTEs of chips, lids, heat sinks, and PCBs – Reduces thermal stresses and warping – Possibly eliminates need for underfill – Enables use of hard solder attach • Low thermal resistance Copyright Carl Zweben 2010 39
  • 40. SUMMARY AND CONCLUSIONS (cont) • Several advanced materials well established – SiC particle/aluminum – Silicon-aluminum – Carbon fiber/polymer – Natural graphite – Pyrolytic graphite sheet – Highly-oriented pyrolytic graphite • Diamond composites used in production microelectronic and optoelectronic systems • Short (2-3 year) cycle from introduction to production demonstrated • Applications increasing steadily Copyright Carl Zweben 2010 40
  • 41. WE ARE THE INFANCY OF A PACKAGING MATERIALS REVOLUTION Copyright Carl Zweben 2010 41
  • 43. TERMINOLOGY • Homogeneous – Properties constant throughout material • Heterogeneous – Properties vary throughout material – E.g. different in matrix and reinforcement – Composites always heterogeneous • Isotropic – Properties the same in every direction • Anisotropic – Properties vary with direction • Inplane isotropic (transversely isotropic) – Properties the same for every direction in a plane (different perpendicular to the plane) Copyright Carl Zweben 2010 43
  • 44. ABBREVIATIONS • C: carbon • CAMC: carbon matrix composite • CCC: carbon/carbon composite • C/C: carbon/carbon • CF - carbon fiber • CMC: ceramic matrix composite • Cond: conductivity • Cont: continuous • CTE: coefficient of thermal expansion • Dens: density • Disc: discontinuous Copyright Carl Zweben 2010 44
  • 45. ABBREVIATIONS (cont) • Elect: Electrical • Ep: epoxy • HOPG: highly oriented pyrolytic graphite • Gr: graphite • MMC: metal matrix composite • PAN: polyacrylonitrile • PCB: printed circuit board • Pitch: carbonaceous petroleum or coal byproduct • PMC: polymer matrix composite • LTCC: low-temperature cofired ceramic • Mod: modulus Copyright Carl Zweben 2010 45
  • 46. ABBREVIATIONS (cont) • PGS: pyrolytic graphite sheet • SG, S.G.: specific gravity • SiCp: Silicon carbide particle • TEC: thermoelectric cooler • Therm: thermal • UHM: ultrahigh modulus • UHS: ultrahigh strength Copyright Carl Zweben 2010 46