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Average 8 t differential-sensing subthreshold sram with bit interleaving and 1k bits per bitline

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I3E Technologies
I3E Technologies

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DOCUMENT FORMAT • Abstract: • Introduction: • Literature Survey: • System Analysis: • Existing System: • Disadvantages: • Proposed System: • Advantages: • System Requirements: • Block Diagram: • Working Flow Diagram: • Circuit Diagram: • Implementation: • Modules Description: • System Study: • System Testing: • Software Description: • Sample code: • Conclusion: • Future Enhancement: • References: OUR OFFICES @ CHENNAI / TRICHY / KARUR / ERODE / MADURAI / SALEM / COIMBATORE /BANGALORE / HYDRABAD CELL: +91 99436 99916 / 99436 99926 / 99436 99936
AVERAGE-8T DIFFERENTIAL-SENSING SUBTHRESHOLD SRAM WITH BIT INTERLEAVING AND 1K BITS PER BITLINE TITLE OUR OFFICES @ CHENNAI / TRICHY / KARUR / ERODE / MADURAI / SALEM / COIMBATORE /BANGALORE / HYDRABAD CELL: +91 99436 99916 / 99436 99926 / 99436 99936
ABSTRACT This paper presents a new average-8T write/read decoupled (A8T-WRD) SRAM architecture for low-power sub/near-threshold SRAM in power-constraint applications such as biomedical implants and autonomous sensor nodes. The proposed architecture consists of several novel concepts in dealing with issues in sub/near-threshold SRAM including: 1) the differential and data-independent-leakage read port that facilitates robust and faster read operation and alleviates issues in the half-selected cell (pseudo- write) while reducing the area compared to the conventional 8T cell and 2) the various configurations from 14T for a baseline cell to 6.5T for an area-efficient 16-bit cell. These configurations reduce the overall bitcell area and enable low operating voltage.. OUR OFFICES @ CHENNAI / TRICHY / KARUR / ERODE / MADURAI / SALEM / COIMBATORE /BANGALORE / HYDRABAD CELL: +91 99436 99916 / 99436 99926 / 99436 99936
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ADDRESS #23A, 2nd Floor SKS Complex, Bus Stand Opp. Karur-639 001. OUR OFFICES @ CHENNAI / TRICHY / KARUR / ERODE / MADURAI / SALEM / COIMBATORE /BANGALORE / HYDRABAD CELL: +91 99436 99916 / 99436 99926 / 99436 99936
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Average 8 t differential-sensing subthreshold sram with bit interleaving and 1k bits per bitline

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  • 2. DOCUMENT FORMAT • Abstract: • Introduction: • Literature Survey: • System Analysis: • Existing System: • Disadvantages: • Proposed System: • Advantages: • System Requirements: • Block Diagram: • Working Flow Diagram: • Circuit Diagram: • Implementation: • Modules Description: • System Study: • System Testing: • Software Description: • Sample code: • Conclusion: • Future Enhancement: • References: OUR OFFICES @ CHENNAI / TRICHY / KARUR / ERODE / MADURAI / SALEM / COIMBATORE /BANGALORE / HYDRABAD CELL: +91 99436 99916 / 99436 99926 / 99436 99936
  • 3. AVERAGE-8T DIFFERENTIAL-SENSING SUBTHRESHOLD SRAM WITH BIT INTERLEAVING AND 1K BITS PER BITLINE TITLE OUR OFFICES @ CHENNAI / TRICHY / KARUR / ERODE / MADURAI / SALEM / COIMBATORE /BANGALORE / HYDRABAD CELL: +91 99436 99916 / 99436 99926 / 99436 99936
  • 4. ABSTRACT This paper presents a new average-8T write/read decoupled (A8T-WRD) SRAM architecture for low-power sub/near-threshold SRAM in power-constraint applications such as biomedical implants and autonomous sensor nodes. The proposed architecture consists of several novel concepts in dealing with issues in sub/near-threshold SRAM including: 1) the differential and data-independent-leakage read port that facilitates robust and faster read operation and alleviates issues in the half-selected cell (pseudo- write) while reducing the area compared to the conventional 8T cell and 2) the various configurations from 14T for a baseline cell to 6.5T for an area-efficient 16-bit cell. These configurations reduce the overall bitcell area and enable low operating voltage.. OUR OFFICES @ CHENNAI / TRICHY / KARUR / ERODE / MADURAI / SALEM / COIMBATORE /BANGALORE / HYDRABAD CELL: +91 99436 99916 / 99436 99926 / 99436 99936
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