SlideShare a Scribd company logo
1 of 26
Download to read offline
RF Transceiver Module Design
Chapter 5
Low Noise Amplifier
李健榮 助理教授
Department of Electronic Engineering
National Taipei University of Technology
Outline
• Basic Amplifier Configurations
• Cascode Low Noise Amplifier (LNA)
• Feedback Topologies
• Classical Two-port Noise Theory
• Input Matching for an LNA
• Noise Figure and Bias Current
• Effect of the Cascode on Noise Figure
• Summary
Department of Electronic Engineering, NTUT2/26
Simple Transistor Amplifier (I)
• Common-emitter (CE) configuration
• Common-base (CB) configuration
• Common-collector (CC) configuration
CE (driver)
CCV
inV
outV
EEV
CB (cascode)
CCV
inV
outV
EEV
Department of Electronic Engineering, NTUT3/26
CC (buffer)
CCV
inV
outV
EEV
• Bipolar Transistor Amplifier
• MOSFET Transistor Amplifier
Simple Transistor Amplifier (II)
CE CB CC
Current Gain High (β) Low (~1) High (1+β)
Voltage Gain High High Low (~1)
Power Gain High Medium High
Zin Medium Low High
Zout Medium High Low
I/O Phasing 180o In-phase In-phase
CS CG CD
Voltage Gain High High Low (~1)
Power Gain High Medium High
Zin High Low High
Zout High High Low
I/O Phasing 180o In-phase In-phase
Department of Electronic Engineering, NTUT4/26
Common-Emitter Configuration
• Gain
• Input Impedance
o L
vo m L
i b e
v r Z
A g Z
v r r r
π
π
= = −
+
≃
er : B-E diode resistance as seen from emitter
er rπ β= 1m eg r=
in bZ r rπ= +
For low frequencies, the parasitic capacitances
have been ignored and rb has been assume to be
low compared to .rπ
CE (driver)
CCV
inV
outV
EEV
LZormg vπrπCπ
br
iv ov
Cµ
vπ
+
−
+
−
+
−
and
Department of Electronic Engineering, NTUT5/26
Miller Effect (I)
• Impedance that connects from input to output
fZ
LZ
inv outv
inZ outZ
vA
( ) 1
fin
in
in out f v
Zv
Z
v v Z A
= =
− −
( ) ( )
for 1
1 1
fout
out f v
out in f v
Zv
Z Z A
v v Z A
= = >>
− −
≃
fC
LZ
inV outV
inZ outZ
vA
( )
1 1
1 1
f
in
v f v
sC
Z
A sC A
= =
+ +
( ) ( )
1 1
1 1 1 1
f
out
v f v
sC
Z
A sC A
= =
+  + 
Like larger cap
Slightly larger
Department of Electronic Engineering, NTUT6/26
Miller Effect (II)
• At radio frequencies:
• Miller’s theorem
Cπ : Low impedance
Cµ : Provides feedback
( )1 1o
A m L m L
v
C C C g Z C g Z
v
µ µ µ
π
 
= − = + 
 
≃
1
1 1B
o m L
v
C C C C
v g Z
π
µ µ µ
   
= − = +   
   
≃
The dominant pole is usually the one formed by
andAC Cπ
( ) ( )1
1
2 ||
p
b s A
f
r r R C Cπ ππ
=
+ +  
sR : source resistance
Note that as ZL decreases, CA is reduced
and the dominant pole frequency is
increased.
Cµ
vπ ov
vπ ov
AC
BC
Department of Electronic Engineering, NTUT7/26
Simplified CE Small-signal Model
• Simplified model for transistor above the dominant pole:
Ignore and just use in transistor model with little error.
• Knowing the pole frequency, we can estimate the gain at
higher frequencies, assuming that there are no other poles
present, with
( )
1
1
vo
v
p
A
A f
f
j
f
=
+
目前無法顯示此圖像。
rπ
br
iv vπ Cπ
Cµ
mg vπ or LZ ovsv
sR
+
−
+
−
+
−
+
−
Department of Electronic Engineering, NTUT8/26
Common-Base Configuration
• CB amplifier is often combined with the CE amplifier to from
an LNA but it can be used by itself as well.
• Low Zin when driven from a current source, it can pass current
through it with near unity gain up to very high frequency.
Therefore, with an appropriate choice of impedance levels, it
can also provide voltage gain.
ini
br
vπ
Cµ
Cπ
mg vπrπ LZ
outi
+
−
Ignoring output impedance
Department of Electronic Engineering, NTUT9/26
Cascode LNA (I)
• CB + CE to form a cascode LNA.
• Since the CB amplifier has a current
gain of approximately 1, then,
ic1 ≈ ic2 = gm1vi .
• The gain is the same as for the CE
amplifier. However, the cascode
transistor reduces the feedback of ,
resulting in increased high-
frequency gain.
1Cµ
CR
CCV
CbiasV
outv
inv
EEV
Driver Q1
Cascode Q2
2ci
1ci
( ) ( )1
1 1
1
2 || 2
p
b s
f
r r R C Cπ π µπ
=
+ +  
21 mg≈
Department of Electronic Engineering, NTUT10/26
Cascode LNA (II)
• Advantages:
Improves frequency response.
Adding another transistor improves the isolation.
• Disadvantages:
Additional poles can become a problem for a large load resistance.
An additional bias voltage is required, and if this cascode bias node is
not properly decoupled, instability can occur.
Reduce signal swing at a given supply voltage, compared to the simple
CE amplifier.
Department of Electronic Engineering, NTUT11/26
Common-Collector Configuration (I)
• The CC amplifier (emitter follower) is a very useful general-
purpose amplifier.
• Voltage gain is close to 1 (buffer).
• High input impedance and low output impedance (good
buffer/output stage).
ER
CCV
iv
EEV
ov
iv
B s bR R r= +
vπ rπ Cπ
ER
mg vπ
Cµ
+
−
Department of Electronic Engineering, NTUT12/26
Common-Collector Configuration (II)
• Miller effect is not a problem, since the collector is grounded.
• Since is typically much less than , it can be left out of the
analysis with little impact on the gain.
• The input impedance:
• The output impedance:
CµCπ
iv
B s bR R r= +
vπ rπ Cπ
ER
mg vπ
Cµ
+
−
( )1A E mZ Z R g Zπ π= + +
1
1
B B
out e
m m
r R sC r R
Z r
g r sC r g
π π π
π π π
+ +
= ≈ ≈
+ +
Department of Electronic Engineering, NTUT13/26
CE with Series Feedback (I)
• CE with Series Feedback (Emitter Degeneration)
Cascode:
Higher frequencies, superior
reverse isolation, but suffers
from reduced linearity.
Most CE and cascode LNAs:
Employing the degeneration
transforms the impedance real
part looking into the base to a
higher impedance for
matching. De-generation also
trades gain for linearity.
outRF
CCV
1L 1C LR
inRF 1Q
eL
CE tuned LNA
CCV
1L 1C LR
2Q
1Q
eL
inRF
biasV
outRF
Cascode tuned LNA
Department of Electronic Engineering, NTUT14/26
CE with Series Feedback (II)
• As the degeneration becomes larger, the gain becomes solely
dependent on the ratio of the two impedances.
• If ZE is inductive, then it will become a real resistance when
reflected to base (raise Zin, useful for matching purposes).
• Conversely, if ZE is capacitive, it will tend to reduce Zin and
can even make it negative.
1
out m L L
in EE
m E
v g R R
v ZZ
g Z
Zπ
−
= ≈ −
 
+ + 
 
sR rπ Cπ mg vπ
EL EREC
xiinv
vπ
Zπ
EZ
+
−
( )1in E mZ Z Z g Zπ π= + +
Department of Electronic Engineering, NTUT15/26
CE with Shunt Feedback (I)
• Matching over a broad bandwidth while having minimal
impact on the noise figure.
• Rf forms the feedback and Cf allow for independent biasing.
• Can be modified to become a cascode amplifier.
• Ignoring the Miller effect and assuming Cf is a short circuit
(1/ωCf << Rf ), the gain is given by
1 1
L
m L
o m LF
v
L Li
f f
R
g R
v g RR
A
R Rv
R R
−
−
= = ≈
+ +
The gain without feedback (−gmRL) is reduced
by the presence of feedback.
sR
fC
fR LR
ov
sv
inZ
outZ
Department of Electronic Engineering, NTUT16/26
CE with Shunt Feedback (II)
• Input impedance
The last term, which is usually dominant, shows that the input impedance is equal
to Rf +RL divided by the open loop gain. Input impedance for the shunt feedback
amplifier has less variation over frequency and process than open-loop amplifier.
• Output impedance
• Feedback results in the reduction of the role the transistor
plays in determining the gain and therefore improves linearity,
but the presence of Rf may degrade the noise depending on the
choice of value for this resistor.
( )
( )
|| ||
1
f L f L f L
in f
f L m L m L m L
Z R R R R R R
Z R Z
R R Z g R g R g R
π
π
π
+ + +
= ≈ ≈
+ + +
( ) ( )1 || ||1
1 || ||
f f
out
m s f
s f m
f
R R
Z
g R R Z
R R Z g
R
π
π
= ≈
  +
+ −  
 
Department of Electronic Engineering, NTUT17/26
Example
2.5 pF
2 V
3 V
LR
sR
fR
12-GHz fT transistors
currents about 5 mA
ov
sv
Input matching
Sample plots using shunt feedback
22
20
18
16
14
12
10
100 300 500 700 900 1100 1300 1500
Gain
Noise figure
OIP3
IIP3
2
0
2−
4−
6−
8−
10−
3
2.5
2
1.5
1.0
0.5
0
IIP3
(dBm)
NF
(dB)
Rf
Gain(dB),OIP3(dBm)
Department of Electronic Engineering, NTUT18/26
CE w/ Shunt Feedback and CC Output Buffer
• CE with an output tends to make for a better match.
• With an output buffer, the voltage gain is
no longer affected by the feedback, so it is approximately that
of a CE amplifier given by [RL /(RE + 1/gm )] minus the loss in
the buffer.
fC fR
LR
CCV CCV
biasI
ER
inV
outVC
Department of Electronic Engineering, NTUT19/26
Classical Two-port Noise Theory (I)
• Use these equivalences, the expression for noise factor can be
written purely in terms of impedances and admittances:
Noisy
Two-portsYsi sYsi
ne
ni
Noiseless
Two-port
22
2
s n s n
s
i i Y e
F
i
+ +
= n c ui i i= + c c ni Y e=
( )
2 22 2 2
2 2
1
s u c s n u c s n
s s
i i Y Y e i Y Y e
F
i i
+ + + + +
= = +
where
2
4
n
n
e
R
kTB
≡
2
4
u
u
i
G
kTB
≡
2
4
s
s
i
G
kTB
≡
( ) ( )
2 2
2
1 1
u c s c s nu c s n
s s
G G G B B RG Y Y R
F
G G
 + + + ++ +  = + = +
, ,and
Department of Electronic Engineering, NTUT20/26
Classical Two-port Noise Theory (II)
• Optimum source admittance:
s c optB B B= − = 2u
s c opt
n
G
G G G
R
= + =and
2
min 1 2 1 2 u
n opt c n c c
n
G
F R G G R G G
R
 
 = + + = + + +  
 
( ) ( )
2 2
min
n
s opt s opt
s
R
F F G G B B
G
 = + − + −  
GA circles
NF circles
Input
matching
Output
matching
Amplifier
sΓ LΓ
0Z
0Z
inΓ outΓ
outZinZ
Department of Electronic Engineering, NTUT
Min. noise figure, min ,, s optNF Γ
Max. available power gain, s in
∗
Γ = Γ
21/26
Input Matching of LNAs for Low Noise
• Many methods for matching the input using passive circuit
elements are with varying bandwidth and complexity.
• Use two inductors to provide the power and noise match for
the LNA, the input impedance is (assume Miller effect is not important
and that rπ is not significant at the frequency of interest)
• To be matched:
, therefore
If Miller effect is considered, the capacitance
will be larger than Cπ , and a larger inductor
will be required to perform the match. Also, the
imaginary part of the input impedance must
equal zero. Therefore,
inRF
bL
1Q
eLC
m e
s
g L
R
Cπ
= s
e
m
R C
L
g
π
=
2
1 s
b
m
R C
L
C g
π
πω
= −
m e
in e b
g Lj
Z j L j L
C Cπ π
ω ω
ω
−
= + + +
Department of Electronic Engineering, NTUT22/26
NF and Bias Current (I)
• Noise due to the base resistance is in series with the input
voltage, so it sees the full amplifier gain. The output noise due
to base resistance is given by
Note that this noise voltage is proportional to the collector current, as is the signal,
so the SNR is independent of bias current.
• Collector shot noise is in parallel with collector signal current
and is directly sent to the output load resistor:
Note that this output voltage is proportional to the square root of the collector
current, and therefore, to improve the noise figure due to collector shot noise, we
increase the current.
, 14bno r b m Lv kTr g R≈ ⋅
, 2Cno I C Lv qI R≈ ⋅
Department of Electronic Engineering, NTUT23/26
NF and Bias Current (II)
• Base shot noise can be converted to input voltage. If Zeq is the
impedance on the base (formed by a combination of matching,
base resistance, source resistance, and transistor input
impedance), then
Note that this output voltage is proportional to the collector current raised to the
power of 3/2. Therefore, to improve the noise figure due to base shot noise, we
decrease the current.
• At low currents, collector shot noise will dominate and noise
figure will improve with increasing current. However, the
effect of base shot noise also increases and will eventually
dominate. Thus, there will be some optimum level to which
the collector current can be increased, beyond which the noise
figure will start to degrade again.
,
2
B
C
no I eq m L
qI
v Z g R
β
≈ ⋅
Department of Electronic Engineering, NTUT24/26
Effect of the Cascode on NF
• The cascode transistor is a CB
amplifier with current gain close to 1.
The cascode transistor is forced to pass
the current of the driver on to the
output. This includes signal and noise
current. Thus, to a first order, the
cascode can have no effect on the noise
figure of the amplifier. In reality it will
add some noise, the cascode LNA can
never be as low noise as a CE amplifier.
CCV
EEV
1br
iv
1cv
2ei
2ci outv
2br
CR
cbiasv
Department of Electronic Engineering, NTUT25/26
Summary
• For three transistor amplifier configurations, the CE amplifier
has higher gain but poor frequency response than CB and CC
amplifiers due to miller effects.
• Cascode configuration of CE and CB has the advantages of
improving frequency response and a little impact on noise
figure.
• Feedback topologies are usually used to improve linearity with
sacrificing some power gain and noise performance.
• Using two inductors (one at emitter and the other at base) to
provide the power and noise match is a common and
convenient matching strategy for the LNA design.
Department of Electronic Engineering, NTUT26/26

More Related Content

What's hot

RF Circuit Design - [Ch2-2] Smith Chart
RF Circuit Design - [Ch2-2] Smith ChartRF Circuit Design - [Ch2-2] Smith Chart
RF Circuit Design - [Ch2-2] Smith ChartSimen Li
 
Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013
Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013
Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013Simen Li
 
RF Module Design - [Chapter 2] Noises
RF Module Design - [Chapter 2] NoisesRF Module Design - [Chapter 2] Noises
RF Module Design - [Chapter 2] NoisesSimen Li
 
RF Circuit Design - [Ch3-2] Power Waves and Power-Gain Expressions
RF Circuit Design - [Ch3-2] Power Waves and Power-Gain ExpressionsRF Circuit Design - [Ch3-2] Power Waves and Power-Gain Expressions
RF Circuit Design - [Ch3-2] Power Waves and Power-Gain ExpressionsSimen Li
 
RF Module Design - [Chapter 7] Voltage-Controlled Oscillator
RF Module Design - [Chapter 7] Voltage-Controlled OscillatorRF Module Design - [Chapter 7] Voltage-Controlled Oscillator
RF Module Design - [Chapter 7] Voltage-Controlled OscillatorSimen Li
 
射頻電子 - [第六章] 低雜訊放大器設計
射頻電子 - [第六章] 低雜訊放大器設計射頻電子 - [第六章] 低雜訊放大器設計
射頻電子 - [第六章] 低雜訊放大器設計Simen Li
 
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band TransceiversMultiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band TransceiversSimen Li
 
RF Circuit Design - [Ch4-1] Microwave Transistor Amplifier
RF Circuit Design - [Ch4-1] Microwave Transistor AmplifierRF Circuit Design - [Ch4-1] Microwave Transistor Amplifier
RF Circuit Design - [Ch4-1] Microwave Transistor AmplifierSimen Li
 
RF Circuit Design - [Ch3-1] Microwave Network
RF Circuit Design - [Ch3-1] Microwave NetworkRF Circuit Design - [Ch3-1] Microwave Network
RF Circuit Design - [Ch3-1] Microwave NetworkSimen Li
 
Multiband Transceivers - [Chapter 4] Design Parameters of Wireless Radios
Multiband Transceivers - [Chapter 4] Design Parameters of Wireless RadiosMultiband Transceivers - [Chapter 4] Design Parameters of Wireless Radios
Multiband Transceivers - [Chapter 4] Design Parameters of Wireless RadiosSimen Li
 
RF Module Design - [Chapter 8] Phase-Locked Loops
RF Module Design - [Chapter 8] Phase-Locked LoopsRF Module Design - [Chapter 8] Phase-Locked Loops
RF Module Design - [Chapter 8] Phase-Locked LoopsSimen Li
 
FILTER DESIGN
FILTER DESIGNFILTER DESIGN
FILTER DESIGNnaimish12
 
MOSFET Small signal model
MOSFET Small signal modelMOSFET Small signal model
MOSFET Small signal modelTeam-VLSI-ITMU
 
Circuit Network Analysis - [Chapter1] Basic Circuit Laws
Circuit Network Analysis - [Chapter1] Basic Circuit LawsCircuit Network Analysis - [Chapter1] Basic Circuit Laws
Circuit Network Analysis - [Chapter1] Basic Circuit LawsSimen Li
 
Multiband Transceivers - [Chapter 2] Noises and Linearities
Multiband Transceivers - [Chapter 2]  Noises and LinearitiesMultiband Transceivers - [Chapter 2]  Noises and Linearities
Multiband Transceivers - [Chapter 2] Noises and LinearitiesSimen Li
 
RF Circuit Design - [Ch2-1] Resonator and Impedance Matching
RF Circuit Design - [Ch2-1] Resonator and Impedance MatchingRF Circuit Design - [Ch2-1] Resonator and Impedance Matching
RF Circuit Design - [Ch2-1] Resonator and Impedance MatchingSimen Li
 

What's hot (20)

Low noise amplifier
Low noise amplifierLow noise amplifier
Low noise amplifier
 
RF Circuit Design - [Ch2-2] Smith Chart
RF Circuit Design - [Ch2-2] Smith ChartRF Circuit Design - [Ch2-2] Smith Chart
RF Circuit Design - [Ch2-2] Smith Chart
 
Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013
Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013
Voltage Controlled Oscillator Design - Short Course at NKFUST, 2013
 
lecture4.ppt
lecture4.pptlecture4.ppt
lecture4.ppt
 
RF Module Design - [Chapter 2] Noises
RF Module Design - [Chapter 2] NoisesRF Module Design - [Chapter 2] Noises
RF Module Design - [Chapter 2] Noises
 
RF Circuit Design - [Ch3-2] Power Waves and Power-Gain Expressions
RF Circuit Design - [Ch3-2] Power Waves and Power-Gain ExpressionsRF Circuit Design - [Ch3-2] Power Waves and Power-Gain Expressions
RF Circuit Design - [Ch3-2] Power Waves and Power-Gain Expressions
 
RF Module Design - [Chapter 7] Voltage-Controlled Oscillator
RF Module Design - [Chapter 7] Voltage-Controlled OscillatorRF Module Design - [Chapter 7] Voltage-Controlled Oscillator
RF Module Design - [Chapter 7] Voltage-Controlled Oscillator
 
射頻電子 - [第六章] 低雜訊放大器設計
射頻電子 - [第六章] 低雜訊放大器設計射頻電子 - [第六章] 低雜訊放大器設計
射頻電子 - [第六章] 低雜訊放大器設計
 
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band TransceiversMultiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
 
RF Circuit Design - [Ch4-1] Microwave Transistor Amplifier
RF Circuit Design - [Ch4-1] Microwave Transistor AmplifierRF Circuit Design - [Ch4-1] Microwave Transistor Amplifier
RF Circuit Design - [Ch4-1] Microwave Transistor Amplifier
 
PLL Note
PLL NotePLL Note
PLL Note
 
RF Circuit Design - [Ch3-1] Microwave Network
RF Circuit Design - [Ch3-1] Microwave NetworkRF Circuit Design - [Ch3-1] Microwave Network
RF Circuit Design - [Ch3-1] Microwave Network
 
Multiband Transceivers - [Chapter 4] Design Parameters of Wireless Radios
Multiband Transceivers - [Chapter 4] Design Parameters of Wireless RadiosMultiband Transceivers - [Chapter 4] Design Parameters of Wireless Radios
Multiband Transceivers - [Chapter 4] Design Parameters of Wireless Radios
 
RF Module Design - [Chapter 8] Phase-Locked Loops
RF Module Design - [Chapter 8] Phase-Locked LoopsRF Module Design - [Chapter 8] Phase-Locked Loops
RF Module Design - [Chapter 8] Phase-Locked Loops
 
RF Transceivers
RF TransceiversRF Transceivers
RF Transceivers
 
FILTER DESIGN
FILTER DESIGNFILTER DESIGN
FILTER DESIGN
 
MOSFET Small signal model
MOSFET Small signal modelMOSFET Small signal model
MOSFET Small signal model
 
Circuit Network Analysis - [Chapter1] Basic Circuit Laws
Circuit Network Analysis - [Chapter1] Basic Circuit LawsCircuit Network Analysis - [Chapter1] Basic Circuit Laws
Circuit Network Analysis - [Chapter1] Basic Circuit Laws
 
Multiband Transceivers - [Chapter 2] Noises and Linearities
Multiband Transceivers - [Chapter 2]  Noises and LinearitiesMultiband Transceivers - [Chapter 2]  Noises and Linearities
Multiband Transceivers - [Chapter 2] Noises and Linearities
 
RF Circuit Design - [Ch2-1] Resonator and Impedance Matching
RF Circuit Design - [Ch2-1] Resonator and Impedance MatchingRF Circuit Design - [Ch2-1] Resonator and Impedance Matching
RF Circuit Design - [Ch2-1] Resonator and Impedance Matching
 

Viewers also liked

深入淺出C語言
深入淺出C語言深入淺出C語言
深入淺出C語言Simen Li
 
[嵌入式系統] 嵌入式系統進階
[嵌入式系統] 嵌入式系統進階[嵌入式系統] 嵌入式系統進階
[嵌入式系統] 嵌入式系統進階Simen Li
 
ADF4113 Frequency Synthesizer 驅動程式實作
ADF4113 Frequency Synthesizer 驅動程式實作ADF4113 Frequency Synthesizer 驅動程式實作
ADF4113 Frequency Synthesizer 驅動程式實作Simen Li
 
[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)Simen Li
 
[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)Simen Li
 
[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)Simen Li
 
[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack Firmware[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack FirmwareSimen Li
 
RF Module Design - [Chapter 6] Power Amplifier
RF Module Design - [Chapter 6]  Power AmplifierRF Module Design - [Chapter 6]  Power Amplifier
RF Module Design - [Chapter 6] Power AmplifierSimen Li
 
[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack Firmware[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack FirmwareSimen Li
 
Multiband Transceivers - [Chapter 7] Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...
Multiband Transceivers - [Chapter 7]  Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...Multiband Transceivers - [Chapter 7]  Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...
Multiband Transceivers - [Chapter 7] Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...Simen Li
 
Multiband Transceivers - [Chapter 7] Spec. Table
Multiband Transceivers - [Chapter 7]  Spec. TableMultiband Transceivers - [Chapter 7]  Spec. Table
Multiband Transceivers - [Chapter 7] Spec. TableSimen Li
 
射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計
射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計
射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計Simen Li
 
射頻電子 - [實驗第三章] 濾波器設計
射頻電子 - [實驗第三章] 濾波器設計射頻電子 - [實驗第三章] 濾波器設計
射頻電子 - [實驗第三章] 濾波器設計Simen Li
 
射頻電子 - [實驗第二章] I/O電路設計
射頻電子 - [實驗第二章] I/O電路設計射頻電子 - [實驗第二章] I/O電路設計
射頻電子 - [實驗第二章] I/O電路設計Simen Li
 
射頻電子 - [實驗第一章] 基頻放大器設計
射頻電子 - [實驗第一章] 基頻放大器設計射頻電子 - [實驗第一章] 基頻放大器設計
射頻電子 - [實驗第一章] 基頻放大器設計Simen Li
 
全端物聯網探索之旅 - 重點整理版
全端物聯網探索之旅 - 重點整理版全端物聯網探索之旅 - 重點整理版
全端物聯網探索之旅 - 重點整理版Simen Li
 

Viewers also liked (16)

深入淺出C語言
深入淺出C語言深入淺出C語言
深入淺出C語言
 
[嵌入式系統] 嵌入式系統進階
[嵌入式系統] 嵌入式系統進階[嵌入式系統] 嵌入式系統進階
[嵌入式系統] 嵌入式系統進階
 
ADF4113 Frequency Synthesizer 驅動程式實作
ADF4113 Frequency Synthesizer 驅動程式實作ADF4113 Frequency Synthesizer 驅動程式實作
ADF4113 Frequency Synthesizer 驅動程式實作
 
[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (3)
 
[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (2)
 
[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)
[嵌入式系統] MCS-51 實驗 - 使用 IAR (1)
 
[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack Firmware[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee 應用實作 - 使用 TI Z-Stack Firmware
 
RF Module Design - [Chapter 6] Power Amplifier
RF Module Design - [Chapter 6]  Power AmplifierRF Module Design - [Chapter 6]  Power Amplifier
RF Module Design - [Chapter 6] Power Amplifier
 
[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack Firmware[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack Firmware
[ZigBee 嵌入式系統] ZigBee Architecture 與 TI Z-Stack Firmware
 
Multiband Transceivers - [Chapter 7] Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...
Multiband Transceivers - [Chapter 7]  Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...Multiband Transceivers - [Chapter 7]  Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...
Multiband Transceivers - [Chapter 7] Multi-mode/Multi-band GSM/GPRS/TDMA/AMP...
 
Multiband Transceivers - [Chapter 7] Spec. Table
Multiband Transceivers - [Chapter 7]  Spec. TableMultiband Transceivers - [Chapter 7]  Spec. Table
Multiband Transceivers - [Chapter 7] Spec. Table
 
射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計
射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計
射頻電子 - [實驗第四章] 微波濾波器與射頻多工器設計
 
射頻電子 - [實驗第三章] 濾波器設計
射頻電子 - [實驗第三章] 濾波器設計射頻電子 - [實驗第三章] 濾波器設計
射頻電子 - [實驗第三章] 濾波器設計
 
射頻電子 - [實驗第二章] I/O電路設計
射頻電子 - [實驗第二章] I/O電路設計射頻電子 - [實驗第二章] I/O電路設計
射頻電子 - [實驗第二章] I/O電路設計
 
射頻電子 - [實驗第一章] 基頻放大器設計
射頻電子 - [實驗第一章] 基頻放大器設計射頻電子 - [實驗第一章] 基頻放大器設計
射頻電子 - [實驗第一章] 基頻放大器設計
 
全端物聯網探索之旅 - 重點整理版
全端物聯網探索之旅 - 重點整理版全端物聯網探索之旅 - 重點整理版
全端物聯網探索之旅 - 重點整理版
 

Similar to RF Transceiver Module Design Chapter 5 Low Noise Amplifier

射頻電子 - [第一章] 知識回顧與通訊系統簡介
射頻電子 - [第一章] 知識回顧與通訊系統簡介射頻電子 - [第一章] 知識回顧與通訊系統簡介
射頻電子 - [第一章] 知識回顧與通訊系統簡介Simen Li
 
Amplifier frequency response (part 2)
Amplifier frequency response (part 2)Amplifier frequency response (part 2)
Amplifier frequency response (part 2)Jamil Ahmed
 
Exp no 3 setb118 Analog electronics
Exp no 3 setb118  Analog electronicsExp no 3 setb118  Analog electronics
Exp no 3 setb118 Analog electronicsOmkar Rane
 
Current Transformers parameter design and graphs - size and design requirements
Current Transformers parameter design and graphs - size and design requirementsCurrent Transformers parameter design and graphs - size and design requirements
Current Transformers parameter design and graphs - size and design requirementsssuser39bdb9
 
eecs242_lect3_rxarch.pdf
eecs242_lect3_rxarch.pdfeecs242_lect3_rxarch.pdf
eecs242_lect3_rxarch.pdfNahshonMObiri
 
High Speed Amplifiers Part 1
High Speed Amplifiers Part 1High Speed Amplifiers Part 1
High Speed Amplifiers Part 1Premier Farnell
 
ECE6420 Final Project Report
ECE6420 Final Project ReportECE6420 Final Project Report
ECE6420 Final Project ReportTianhao Li
 
Electronics and Communication Engineering
Electronics and Communication EngineeringElectronics and Communication Engineering
Electronics and Communication EngineeringEkeeda
 
射頻電子 - [第三章] 史密斯圖與阻抗匹配
射頻電子 - [第三章] 史密斯圖與阻抗匹配射頻電子 - [第三章] 史密斯圖與阻抗匹配
射頻電子 - [第三章] 史密斯圖與阻抗匹配Simen Li
 
sp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptx
sp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptxsp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptx
sp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptxElisée Ndjabu
 
16 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.3
16 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.316 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.3
16 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.3MahoneyKadir
 
Differentiator.ppt
Differentiator.pptDifferentiator.ppt
Differentiator.pptPonnalaguRN1
 
Chapter 15
Chapter 15Chapter 15
Chapter 15Tha Mike
 
Analog and Digital Electronics Lab Manual
Analog and Digital Electronics Lab ManualAnalog and Digital Electronics Lab Manual
Analog and Digital Electronics Lab ManualChirag Shetty
 
power electronics FiringCkt.pdf.crdownload.pptx
power electronics FiringCkt.pdf.crdownload.pptxpower electronics FiringCkt.pdf.crdownload.pptx
power electronics FiringCkt.pdf.crdownload.pptxdivakarrvl
 
Small signal analysis of bjt amplifiers
Small signal analysis of bjt amplifiersSmall signal analysis of bjt amplifiers
Small signal analysis of bjt amplifiersPRAVEENA N G
 

Similar to RF Transceiver Module Design Chapter 5 Low Noise Amplifier (20)

射頻電子 - [第一章] 知識回顧與通訊系統簡介
射頻電子 - [第一章] 知識回顧與通訊系統簡介射頻電子 - [第一章] 知識回顧與通訊系統簡介
射頻電子 - [第一章] 知識回顧與通訊系統簡介
 
Amplifier frequency response (part 2)
Amplifier frequency response (part 2)Amplifier frequency response (part 2)
Amplifier frequency response (part 2)
 
Frequency Response.pptx
Frequency Response.pptxFrequency Response.pptx
Frequency Response.pptx
 
Thesis presentation
Thesis presentationThesis presentation
Thesis presentation
 
Linear integrated circuit
Linear integrated circuitLinear integrated circuit
Linear integrated circuit
 
Exp no 3 setb118 Analog electronics
Exp no 3 setb118  Analog electronicsExp no 3 setb118  Analog electronics
Exp no 3 setb118 Analog electronics
 
Current Transformers parameter design and graphs - size and design requirements
Current Transformers parameter design and graphs - size and design requirementsCurrent Transformers parameter design and graphs - size and design requirements
Current Transformers parameter design and graphs - size and design requirements
 
eecs242_lect3_rxarch.pdf
eecs242_lect3_rxarch.pdfeecs242_lect3_rxarch.pdf
eecs242_lect3_rxarch.pdf
 
High Speed Amplifiers Part 1
High Speed Amplifiers Part 1High Speed Amplifiers Part 1
High Speed Amplifiers Part 1
 
ECE6420 Final Project Report
ECE6420 Final Project ReportECE6420 Final Project Report
ECE6420 Final Project Report
 
Electronics and Communication Engineering
Electronics and Communication EngineeringElectronics and Communication Engineering
Electronics and Communication Engineering
 
射頻電子 - [第三章] 史密斯圖與阻抗匹配
射頻電子 - [第三章] 史密斯圖與阻抗匹配射頻電子 - [第三章] 史密斯圖與阻抗匹配
射頻電子 - [第三章] 史密斯圖與阻抗匹配
 
3661.pdf
3661.pdf3661.pdf
3661.pdf
 
sp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptx
sp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptxsp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptx
sp12Part2 CIRCUITS AND SYSTEMS FOR COMPUTER ENGINEERING .pptx
 
16 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.3
16 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.316 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.3
16 s1 ee2002_ld_multi-stage_differential_amplifiers_v1.3
 
Differentiator.ppt
Differentiator.pptDifferentiator.ppt
Differentiator.ppt
 
Chapter 15
Chapter 15Chapter 15
Chapter 15
 
Analog and Digital Electronics Lab Manual
Analog and Digital Electronics Lab ManualAnalog and Digital Electronics Lab Manual
Analog and Digital Electronics Lab Manual
 
power electronics FiringCkt.pdf.crdownload.pptx
power electronics FiringCkt.pdf.crdownload.pptxpower electronics FiringCkt.pdf.crdownload.pptx
power electronics FiringCkt.pdf.crdownload.pptx
 
Small signal analysis of bjt amplifiers
Small signal analysis of bjt amplifiersSmall signal analysis of bjt amplifiers
Small signal analysis of bjt amplifiers
 

More from Simen Li

2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)
2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)
2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)Simen Li
 
Node.js Event Loop & EventEmitter
Node.js Event Loop & EventEmitterNode.js Event Loop & EventEmitter
Node.js Event Loop & EventEmitterSimen Li
 
專題製作發想與報告撰寫技巧
專題製作發想與報告撰寫技巧專題製作發想與報告撰寫技巧
專題製作發想與報告撰寫技巧Simen Li
 
Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬
Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬
Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬Simen Li
 
Agilent ADS 模擬手冊 [實習2] 放大器設計
Agilent ADS 模擬手冊 [實習2]  放大器設計Agilent ADS 模擬手冊 [實習2]  放大器設計
Agilent ADS 模擬手冊 [實習2] 放大器設計Simen Li
 
Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計
Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計
Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計Simen Li
 
射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬
射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬
射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬Simen Li
 
射頻電子實驗手冊 - [實驗7] 射頻放大器模擬
射頻電子實驗手冊 - [實驗7] 射頻放大器模擬射頻電子實驗手冊 - [實驗7] 射頻放大器模擬
射頻電子實驗手冊 - [實驗7] 射頻放大器模擬Simen Li
 
射頻電子實驗手冊 [實驗6] 阻抗匹配模擬
射頻電子實驗手冊 [實驗6] 阻抗匹配模擬射頻電子實驗手冊 [實驗6] 阻抗匹配模擬
射頻電子實驗手冊 [實驗6] 阻抗匹配模擬Simen Li
 
射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬
射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬
射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬Simen Li
 

More from Simen Li (10)

2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)
2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)
2018 VLSI/CAD Symposium Tutorial (Aug. 7, 20:00-21:00 Room 3F-VII)
 
Node.js Event Loop & EventEmitter
Node.js Event Loop & EventEmitterNode.js Event Loop & EventEmitter
Node.js Event Loop & EventEmitter
 
專題製作發想與報告撰寫技巧
專題製作發想與報告撰寫技巧專題製作發想與報告撰寫技巧
專題製作發想與報告撰寫技巧
 
Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬
Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬
Agilent ADS 模擬手冊 [實習3] 壓控振盪器模擬
 
Agilent ADS 模擬手冊 [實習2] 放大器設計
Agilent ADS 模擬手冊 [實習2]  放大器設計Agilent ADS 模擬手冊 [實習2]  放大器設計
Agilent ADS 模擬手冊 [實習2] 放大器設計
 
Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計
Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計
Agilent ADS 模擬手冊 [實習1] 基本操作與射頻放大器設計
 
射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬
射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬
射頻電子實驗手冊 - [實驗8] 低雜訊放大器模擬
 
射頻電子實驗手冊 - [實驗7] 射頻放大器模擬
射頻電子實驗手冊 - [實驗7] 射頻放大器模擬射頻電子實驗手冊 - [實驗7] 射頻放大器模擬
射頻電子實驗手冊 - [實驗7] 射頻放大器模擬
 
射頻電子實驗手冊 [實驗6] 阻抗匹配模擬
射頻電子實驗手冊 [實驗6] 阻抗匹配模擬射頻電子實驗手冊 [實驗6] 阻抗匹配模擬
射頻電子實驗手冊 [實驗6] 阻抗匹配模擬
 
射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬
射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬
射頻電子實驗手冊 [實驗1 ~ 5] ADS入門, 傳輸線模擬, 直流模擬, 暫態模擬, 交流模擬
 

Recently uploaded

Architect Hassan Khalil Portfolio for 2024
Architect Hassan Khalil Portfolio for 2024Architect Hassan Khalil Portfolio for 2024
Architect Hassan Khalil Portfolio for 2024hassan khalil
 
INFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETE
INFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETEINFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETE
INFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETEroselinkalist12
 
Instrumentation, measurement and control of bio process parameters ( Temperat...
Instrumentation, measurement and control of bio process parameters ( Temperat...Instrumentation, measurement and control of bio process parameters ( Temperat...
Instrumentation, measurement and control of bio process parameters ( Temperat...121011101441
 
Study on Air-Water & Water-Water Heat Exchange in a Finned Tube Exchanger
Study on Air-Water & Water-Water Heat Exchange in a Finned Tube ExchangerStudy on Air-Water & Water-Water Heat Exchange in a Finned Tube Exchanger
Study on Air-Water & Water-Water Heat Exchange in a Finned Tube ExchangerAnamika Sarkar
 
Churning of Butter, Factors affecting .
Churning of Butter, Factors affecting  .Churning of Butter, Factors affecting  .
Churning of Butter, Factors affecting .Satyam Kumar
 
Decoding Kotlin - Your guide to solving the mysterious in Kotlin.pptx
Decoding Kotlin - Your guide to solving the mysterious in Kotlin.pptxDecoding Kotlin - Your guide to solving the mysterious in Kotlin.pptx
Decoding Kotlin - Your guide to solving the mysterious in Kotlin.pptxJoão Esperancinha
 
Arduino_CSE ece ppt for working and principal of arduino.ppt
Arduino_CSE ece ppt for working and principal of arduino.pptArduino_CSE ece ppt for working and principal of arduino.ppt
Arduino_CSE ece ppt for working and principal of arduino.pptSAURABHKUMAR892774
 
Call Girls Delhi {Jodhpur} 9711199012 high profile service
Call Girls Delhi {Jodhpur} 9711199012 high profile serviceCall Girls Delhi {Jodhpur} 9711199012 high profile service
Call Girls Delhi {Jodhpur} 9711199012 high profile servicerehmti665
 
CCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdf
CCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdfCCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdf
CCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdfAsst.prof M.Gokilavani
 
Sachpazis Costas: Geotechnical Engineering: A student's Perspective Introduction
Sachpazis Costas: Geotechnical Engineering: A student's Perspective IntroductionSachpazis Costas: Geotechnical Engineering: A student's Perspective Introduction
Sachpazis Costas: Geotechnical Engineering: A student's Perspective IntroductionDr.Costas Sachpazis
 
Risk Assessment For Installation of Drainage Pipes.pdf
Risk Assessment For Installation of Drainage Pipes.pdfRisk Assessment For Installation of Drainage Pipes.pdf
Risk Assessment For Installation of Drainage Pipes.pdfROCENODodongVILLACER
 
Comparative Analysis of Text Summarization Techniques
Comparative Analysis of Text Summarization TechniquesComparative Analysis of Text Summarization Techniques
Comparative Analysis of Text Summarization Techniquesugginaramesh
 
Correctly Loading Incremental Data at Scale
Correctly Loading Incremental Data at ScaleCorrectly Loading Incremental Data at Scale
Correctly Loading Incremental Data at ScaleAlluxio, Inc.
 
Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)
Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)
Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)dollysharma2066
 
8251 universal synchronous asynchronous receiver transmitter
8251 universal synchronous asynchronous receiver transmitter8251 universal synchronous asynchronous receiver transmitter
8251 universal synchronous asynchronous receiver transmitterShivangiSharma879191
 
Application of Residue Theorem to evaluate real integrations.pptx
Application of Residue Theorem to evaluate real integrations.pptxApplication of Residue Theorem to evaluate real integrations.pptx
Application of Residue Theorem to evaluate real integrations.pptx959SahilShah
 

Recently uploaded (20)

Architect Hassan Khalil Portfolio for 2024
Architect Hassan Khalil Portfolio for 2024Architect Hassan Khalil Portfolio for 2024
Architect Hassan Khalil Portfolio for 2024
 
INFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETE
INFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETEINFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETE
INFLUENCE OF NANOSILICA ON THE PROPERTIES OF CONCRETE
 
Instrumentation, measurement and control of bio process parameters ( Temperat...
Instrumentation, measurement and control of bio process parameters ( Temperat...Instrumentation, measurement and control of bio process parameters ( Temperat...
Instrumentation, measurement and control of bio process parameters ( Temperat...
 
Study on Air-Water & Water-Water Heat Exchange in a Finned Tube Exchanger
Study on Air-Water & Water-Water Heat Exchange in a Finned Tube ExchangerStudy on Air-Water & Water-Water Heat Exchange in a Finned Tube Exchanger
Study on Air-Water & Water-Water Heat Exchange in a Finned Tube Exchanger
 
POWER SYSTEMS-1 Complete notes examples
POWER SYSTEMS-1 Complete notes  examplesPOWER SYSTEMS-1 Complete notes  examples
POWER SYSTEMS-1 Complete notes examples
 
young call girls in Green Park🔝 9953056974 🔝 escort Service
young call girls in Green Park🔝 9953056974 🔝 escort Serviceyoung call girls in Green Park🔝 9953056974 🔝 escort Service
young call girls in Green Park🔝 9953056974 🔝 escort Service
 
Churning of Butter, Factors affecting .
Churning of Butter, Factors affecting  .Churning of Butter, Factors affecting  .
Churning of Butter, Factors affecting .
 
Decoding Kotlin - Your guide to solving the mysterious in Kotlin.pptx
Decoding Kotlin - Your guide to solving the mysterious in Kotlin.pptxDecoding Kotlin - Your guide to solving the mysterious in Kotlin.pptx
Decoding Kotlin - Your guide to solving the mysterious in Kotlin.pptx
 
Arduino_CSE ece ppt for working and principal of arduino.ppt
Arduino_CSE ece ppt for working and principal of arduino.pptArduino_CSE ece ppt for working and principal of arduino.ppt
Arduino_CSE ece ppt for working and principal of arduino.ppt
 
Call Girls Delhi {Jodhpur} 9711199012 high profile service
Call Girls Delhi {Jodhpur} 9711199012 high profile serviceCall Girls Delhi {Jodhpur} 9711199012 high profile service
Call Girls Delhi {Jodhpur} 9711199012 high profile service
 
Design and analysis of solar grass cutter.pdf
Design and analysis of solar grass cutter.pdfDesign and analysis of solar grass cutter.pdf
Design and analysis of solar grass cutter.pdf
 
CCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdf
CCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdfCCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdf
CCS355 Neural Networks & Deep Learning Unit 1 PDF notes with Question bank .pdf
 
Sachpazis Costas: Geotechnical Engineering: A student's Perspective Introduction
Sachpazis Costas: Geotechnical Engineering: A student's Perspective IntroductionSachpazis Costas: Geotechnical Engineering: A student's Perspective Introduction
Sachpazis Costas: Geotechnical Engineering: A student's Perspective Introduction
 
Risk Assessment For Installation of Drainage Pipes.pdf
Risk Assessment For Installation of Drainage Pipes.pdfRisk Assessment For Installation of Drainage Pipes.pdf
Risk Assessment For Installation of Drainage Pipes.pdf
 
Comparative Analysis of Text Summarization Techniques
Comparative Analysis of Text Summarization TechniquesComparative Analysis of Text Summarization Techniques
Comparative Analysis of Text Summarization Techniques
 
Correctly Loading Incremental Data at Scale
Correctly Loading Incremental Data at ScaleCorrectly Loading Incremental Data at Scale
Correctly Loading Incremental Data at Scale
 
Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)
Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)
Call Us ≽ 8377877756 ≼ Call Girls In Shastri Nagar (Delhi)
 
Call Us -/9953056974- Call Girls In Vikaspuri-/- Delhi NCR
Call Us -/9953056974- Call Girls In Vikaspuri-/- Delhi NCRCall Us -/9953056974- Call Girls In Vikaspuri-/- Delhi NCR
Call Us -/9953056974- Call Girls In Vikaspuri-/- Delhi NCR
 
8251 universal synchronous asynchronous receiver transmitter
8251 universal synchronous asynchronous receiver transmitter8251 universal synchronous asynchronous receiver transmitter
8251 universal synchronous asynchronous receiver transmitter
 
Application of Residue Theorem to evaluate real integrations.pptx
Application of Residue Theorem to evaluate real integrations.pptxApplication of Residue Theorem to evaluate real integrations.pptx
Application of Residue Theorem to evaluate real integrations.pptx
 

RF Transceiver Module Design Chapter 5 Low Noise Amplifier

  • 1. RF Transceiver Module Design Chapter 5 Low Noise Amplifier 李健榮 助理教授 Department of Electronic Engineering National Taipei University of Technology
  • 2. Outline • Basic Amplifier Configurations • Cascode Low Noise Amplifier (LNA) • Feedback Topologies • Classical Two-port Noise Theory • Input Matching for an LNA • Noise Figure and Bias Current • Effect of the Cascode on Noise Figure • Summary Department of Electronic Engineering, NTUT2/26
  • 3. Simple Transistor Amplifier (I) • Common-emitter (CE) configuration • Common-base (CB) configuration • Common-collector (CC) configuration CE (driver) CCV inV outV EEV CB (cascode) CCV inV outV EEV Department of Electronic Engineering, NTUT3/26 CC (buffer) CCV inV outV EEV
  • 4. • Bipolar Transistor Amplifier • MOSFET Transistor Amplifier Simple Transistor Amplifier (II) CE CB CC Current Gain High (β) Low (~1) High (1+β) Voltage Gain High High Low (~1) Power Gain High Medium High Zin Medium Low High Zout Medium High Low I/O Phasing 180o In-phase In-phase CS CG CD Voltage Gain High High Low (~1) Power Gain High Medium High Zin High Low High Zout High High Low I/O Phasing 180o In-phase In-phase Department of Electronic Engineering, NTUT4/26
  • 5. Common-Emitter Configuration • Gain • Input Impedance o L vo m L i b e v r Z A g Z v r r r π π = = − + ≃ er : B-E diode resistance as seen from emitter er rπ β= 1m eg r= in bZ r rπ= + For low frequencies, the parasitic capacitances have been ignored and rb has been assume to be low compared to .rπ CE (driver) CCV inV outV EEV LZormg vπrπCπ br iv ov Cµ vπ + − + − + − and Department of Electronic Engineering, NTUT5/26
  • 6. Miller Effect (I) • Impedance that connects from input to output fZ LZ inv outv inZ outZ vA ( ) 1 fin in in out f v Zv Z v v Z A = = − − ( ) ( ) for 1 1 1 fout out f v out in f v Zv Z Z A v v Z A = = >> − − ≃ fC LZ inV outV inZ outZ vA ( ) 1 1 1 1 f in v f v sC Z A sC A = = + + ( ) ( ) 1 1 1 1 1 1 f out v f v sC Z A sC A = = +  +  Like larger cap Slightly larger Department of Electronic Engineering, NTUT6/26
  • 7. Miller Effect (II) • At radio frequencies: • Miller’s theorem Cπ : Low impedance Cµ : Provides feedback ( )1 1o A m L m L v C C C g Z C g Z v µ µ µ π   = − = +    ≃ 1 1 1B o m L v C C C C v g Z π µ µ µ     = − = +        ≃ The dominant pole is usually the one formed by andAC Cπ ( ) ( )1 1 2 || p b s A f r r R C Cπ ππ = + +   sR : source resistance Note that as ZL decreases, CA is reduced and the dominant pole frequency is increased. Cµ vπ ov vπ ov AC BC Department of Electronic Engineering, NTUT7/26
  • 8. Simplified CE Small-signal Model • Simplified model for transistor above the dominant pole: Ignore and just use in transistor model with little error. • Knowing the pole frequency, we can estimate the gain at higher frequencies, assuming that there are no other poles present, with ( ) 1 1 vo v p A A f f j f = + 目前無法顯示此圖像。 rπ br iv vπ Cπ Cµ mg vπ or LZ ovsv sR + − + − + − + − Department of Electronic Engineering, NTUT8/26
  • 9. Common-Base Configuration • CB amplifier is often combined with the CE amplifier to from an LNA but it can be used by itself as well. • Low Zin when driven from a current source, it can pass current through it with near unity gain up to very high frequency. Therefore, with an appropriate choice of impedance levels, it can also provide voltage gain. ini br vπ Cµ Cπ mg vπrπ LZ outi + − Ignoring output impedance Department of Electronic Engineering, NTUT9/26
  • 10. Cascode LNA (I) • CB + CE to form a cascode LNA. • Since the CB amplifier has a current gain of approximately 1, then, ic1 ≈ ic2 = gm1vi . • The gain is the same as for the CE amplifier. However, the cascode transistor reduces the feedback of , resulting in increased high- frequency gain. 1Cµ CR CCV CbiasV outv inv EEV Driver Q1 Cascode Q2 2ci 1ci ( ) ( )1 1 1 1 2 || 2 p b s f r r R C Cπ π µπ = + +   21 mg≈ Department of Electronic Engineering, NTUT10/26
  • 11. Cascode LNA (II) • Advantages: Improves frequency response. Adding another transistor improves the isolation. • Disadvantages: Additional poles can become a problem for a large load resistance. An additional bias voltage is required, and if this cascode bias node is not properly decoupled, instability can occur. Reduce signal swing at a given supply voltage, compared to the simple CE amplifier. Department of Electronic Engineering, NTUT11/26
  • 12. Common-Collector Configuration (I) • The CC amplifier (emitter follower) is a very useful general- purpose amplifier. • Voltage gain is close to 1 (buffer). • High input impedance and low output impedance (good buffer/output stage). ER CCV iv EEV ov iv B s bR R r= + vπ rπ Cπ ER mg vπ Cµ + − Department of Electronic Engineering, NTUT12/26
  • 13. Common-Collector Configuration (II) • Miller effect is not a problem, since the collector is grounded. • Since is typically much less than , it can be left out of the analysis with little impact on the gain. • The input impedance: • The output impedance: CµCπ iv B s bR R r= + vπ rπ Cπ ER mg vπ Cµ + − ( )1A E mZ Z R g Zπ π= + + 1 1 B B out e m m r R sC r R Z r g r sC r g π π π π π π + + = ≈ ≈ + + Department of Electronic Engineering, NTUT13/26
  • 14. CE with Series Feedback (I) • CE with Series Feedback (Emitter Degeneration) Cascode: Higher frequencies, superior reverse isolation, but suffers from reduced linearity. Most CE and cascode LNAs: Employing the degeneration transforms the impedance real part looking into the base to a higher impedance for matching. De-generation also trades gain for linearity. outRF CCV 1L 1C LR inRF 1Q eL CE tuned LNA CCV 1L 1C LR 2Q 1Q eL inRF biasV outRF Cascode tuned LNA Department of Electronic Engineering, NTUT14/26
  • 15. CE with Series Feedback (II) • As the degeneration becomes larger, the gain becomes solely dependent on the ratio of the two impedances. • If ZE is inductive, then it will become a real resistance when reflected to base (raise Zin, useful for matching purposes). • Conversely, if ZE is capacitive, it will tend to reduce Zin and can even make it negative. 1 out m L L in EE m E v g R R v ZZ g Z Zπ − = ≈ −   + +    sR rπ Cπ mg vπ EL EREC xiinv vπ Zπ EZ + − ( )1in E mZ Z Z g Zπ π= + + Department of Electronic Engineering, NTUT15/26
  • 16. CE with Shunt Feedback (I) • Matching over a broad bandwidth while having minimal impact on the noise figure. • Rf forms the feedback and Cf allow for independent biasing. • Can be modified to become a cascode amplifier. • Ignoring the Miller effect and assuming Cf is a short circuit (1/ωCf << Rf ), the gain is given by 1 1 L m L o m LF v L Li f f R g R v g RR A R Rv R R − − = = ≈ + + The gain without feedback (−gmRL) is reduced by the presence of feedback. sR fC fR LR ov sv inZ outZ Department of Electronic Engineering, NTUT16/26
  • 17. CE with Shunt Feedback (II) • Input impedance The last term, which is usually dominant, shows that the input impedance is equal to Rf +RL divided by the open loop gain. Input impedance for the shunt feedback amplifier has less variation over frequency and process than open-loop amplifier. • Output impedance • Feedback results in the reduction of the role the transistor plays in determining the gain and therefore improves linearity, but the presence of Rf may degrade the noise depending on the choice of value for this resistor. ( ) ( ) || || 1 f L f L f L in f f L m L m L m L Z R R R R R R Z R Z R R Z g R g R g R π π π + + + = ≈ ≈ + + + ( ) ( )1 || ||1 1 || || f f out m s f s f m f R R Z g R R Z R R Z g R π π = ≈   + + −     Department of Electronic Engineering, NTUT17/26
  • 18. Example 2.5 pF 2 V 3 V LR sR fR 12-GHz fT transistors currents about 5 mA ov sv Input matching Sample plots using shunt feedback 22 20 18 16 14 12 10 100 300 500 700 900 1100 1300 1500 Gain Noise figure OIP3 IIP3 2 0 2− 4− 6− 8− 10− 3 2.5 2 1.5 1.0 0.5 0 IIP3 (dBm) NF (dB) Rf Gain(dB),OIP3(dBm) Department of Electronic Engineering, NTUT18/26
  • 19. CE w/ Shunt Feedback and CC Output Buffer • CE with an output tends to make for a better match. • With an output buffer, the voltage gain is no longer affected by the feedback, so it is approximately that of a CE amplifier given by [RL /(RE + 1/gm )] minus the loss in the buffer. fC fR LR CCV CCV biasI ER inV outVC Department of Electronic Engineering, NTUT19/26
  • 20. Classical Two-port Noise Theory (I) • Use these equivalences, the expression for noise factor can be written purely in terms of impedances and admittances: Noisy Two-portsYsi sYsi ne ni Noiseless Two-port 22 2 s n s n s i i Y e F i + + = n c ui i i= + c c ni Y e= ( ) 2 22 2 2 2 2 1 s u c s n u c s n s s i i Y Y e i Y Y e F i i + + + + + = = + where 2 4 n n e R kTB ≡ 2 4 u u i G kTB ≡ 2 4 s s i G kTB ≡ ( ) ( ) 2 2 2 1 1 u c s c s nu c s n s s G G G B B RG Y Y R F G G  + + + ++ +  = + = + , ,and Department of Electronic Engineering, NTUT20/26
  • 21. Classical Two-port Noise Theory (II) • Optimum source admittance: s c optB B B= − = 2u s c opt n G G G G R = + =and 2 min 1 2 1 2 u n opt c n c c n G F R G G R G G R    = + + = + + +     ( ) ( ) 2 2 min n s opt s opt s R F F G G B B G  = + − + −   GA circles NF circles Input matching Output matching Amplifier sΓ LΓ 0Z 0Z inΓ outΓ outZinZ Department of Electronic Engineering, NTUT Min. noise figure, min ,, s optNF Γ Max. available power gain, s in ∗ Γ = Γ 21/26
  • 22. Input Matching of LNAs for Low Noise • Many methods for matching the input using passive circuit elements are with varying bandwidth and complexity. • Use two inductors to provide the power and noise match for the LNA, the input impedance is (assume Miller effect is not important and that rπ is not significant at the frequency of interest) • To be matched: , therefore If Miller effect is considered, the capacitance will be larger than Cπ , and a larger inductor will be required to perform the match. Also, the imaginary part of the input impedance must equal zero. Therefore, inRF bL 1Q eLC m e s g L R Cπ = s e m R C L g π = 2 1 s b m R C L C g π πω = − m e in e b g Lj Z j L j L C Cπ π ω ω ω − = + + + Department of Electronic Engineering, NTUT22/26
  • 23. NF and Bias Current (I) • Noise due to the base resistance is in series with the input voltage, so it sees the full amplifier gain. The output noise due to base resistance is given by Note that this noise voltage is proportional to the collector current, as is the signal, so the SNR is independent of bias current. • Collector shot noise is in parallel with collector signal current and is directly sent to the output load resistor: Note that this output voltage is proportional to the square root of the collector current, and therefore, to improve the noise figure due to collector shot noise, we increase the current. , 14bno r b m Lv kTr g R≈ ⋅ , 2Cno I C Lv qI R≈ ⋅ Department of Electronic Engineering, NTUT23/26
  • 24. NF and Bias Current (II) • Base shot noise can be converted to input voltage. If Zeq is the impedance on the base (formed by a combination of matching, base resistance, source resistance, and transistor input impedance), then Note that this output voltage is proportional to the collector current raised to the power of 3/2. Therefore, to improve the noise figure due to base shot noise, we decrease the current. • At low currents, collector shot noise will dominate and noise figure will improve with increasing current. However, the effect of base shot noise also increases and will eventually dominate. Thus, there will be some optimum level to which the collector current can be increased, beyond which the noise figure will start to degrade again. , 2 B C no I eq m L qI v Z g R β ≈ ⋅ Department of Electronic Engineering, NTUT24/26
  • 25. Effect of the Cascode on NF • The cascode transistor is a CB amplifier with current gain close to 1. The cascode transistor is forced to pass the current of the driver on to the output. This includes signal and noise current. Thus, to a first order, the cascode can have no effect on the noise figure of the amplifier. In reality it will add some noise, the cascode LNA can never be as low noise as a CE amplifier. CCV EEV 1br iv 1cv 2ei 2ci outv 2br CR cbiasv Department of Electronic Engineering, NTUT25/26
  • 26. Summary • For three transistor amplifier configurations, the CE amplifier has higher gain but poor frequency response than CB and CC amplifiers due to miller effects. • Cascode configuration of CE and CB has the advantages of improving frequency response and a little impact on noise figure. • Feedback topologies are usually used to improve linearity with sacrificing some power gain and noise performance. • Using two inductors (one at emitter and the other at base) to provide the power and noise match is a common and convenient matching strategy for the LNA design. Department of Electronic Engineering, NTUT26/26